Final published version
Final published version
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
}
TY - JOUR
T1 - Room temperature extraordinary magnetoresistance of nonmagnetic narrow-gap semiconductor/metal composites
T2 - application to read-head sensors for ultrahigh-density magnetic recording
AU - Solin, S. A.
AU - Hines, D. R.
AU - Tsai, Jaw-Shen
AU - Pashkin, Yuri
AU - Chung, S. J.
AU - Goel, N.
AU - Santos, M.
PY - 2002/1
Y1 - 2002/1
N2 - The room temperature extraordinary magnetoresistance (EMR) of a mesoscopic sensor structure prepared from an InSb quantum well of dimension 30 nm wide/spl times/100 nm high/spl times/3 /spl mu/m long is reported. The observed EMR is 4.75% at a relevant field of 0.05 T. The advantages and disadvantages of this nonmagnetic composite semiconductor/metal structure relative to that of conventional magnetic giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) devices for use as read-heads in high-density magnetic recording are discussed.
AB - The room temperature extraordinary magnetoresistance (EMR) of a mesoscopic sensor structure prepared from an InSb quantum well of dimension 30 nm wide/spl times/100 nm high/spl times/3 /spl mu/m long is reported. The observed EMR is 4.75% at a relevant field of 0.05 T. The advantages and disadvantages of this nonmagnetic composite semiconductor/metal structure relative to that of conventional magnetic giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) devices for use as read-heads in high-density magnetic recording are discussed.
KW - magnetoresistive devices
KW - magnetoresistance
KW - digital magnetic recording
KW - indium compounds
KW - semiconductor quantum wells
KW - semiconductor-metal boundaries
KW - III-V semiconductors
KW - magnetic heads
KW - sputter etching
KW - electron beam lithography
KW - room temperature extraordinary magnetoresistance
KW - room temperature EMR
KW - narrow-gap semiconductor/metal composites
KW - mesoscopic sensor structure
KW - InSb quantum well
KW - nonmagnetic composite semiconductor/metal structure
KW - read heads
KW - ultrahigh-density magnetic recording
KW - 30 nm
KW - 100 nm
KW - 3 micron
KW - 0.05 T
KW - InSb
KW - Extraordinary magnetoresistance
KW - Magnetic materials
KW - Magnetic sensors
KW - Temperature sensors
KW - Giant magnetoresistance
KW - Tunneling magnetoresistance
KW - Colossal magnetoresistance
KW - Semiconductor materials
KW - Geometry
KW - Magnetic recording
U2 - 10.1109/TMAG.2002.988917
DO - 10.1109/TMAG.2002.988917
M3 - Journal article
VL - 38
SP - 89
EP - 94
JO - IEEE Transactions on Magnetics
JF - IEEE Transactions on Magnetics
SN - 0018-9464
IS - 1
ER -