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Room temperature extraordinary magnetoresistance of nonmagnetic narrow-gap semiconductor/metal composites: application to read-head sensors for ultrahigh-density magnetic recording

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Room temperature extraordinary magnetoresistance of nonmagnetic narrow-gap semiconductor/metal composites : application to read-head sensors for ultrahigh-density magnetic recording. / Solin, S. A.; Hines, D. R.; Tsai, Jaw-Shen; Pashkin, Yuri; Chung, S. J.; Goel, N.; Santos, M.

In: IEEE Transactions on Magnetics, Vol. 38, No. 1, 01.2002, p. 89-94.

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Solin, S. A. ; Hines, D. R. ; Tsai, Jaw-Shen ; Pashkin, Yuri ; Chung, S. J. ; Goel, N. ; Santos, M. / Room temperature extraordinary magnetoresistance of nonmagnetic narrow-gap semiconductor/metal composites : application to read-head sensors for ultrahigh-density magnetic recording. In: IEEE Transactions on Magnetics. 2002 ; Vol. 38, No. 1. pp. 89-94.

Bibtex

@article{00fe40e9a4704b37ac683490f83399d3,
title = "Room temperature extraordinary magnetoresistance of nonmagnetic narrow-gap semiconductor/metal composites: application to read-head sensors for ultrahigh-density magnetic recording",
abstract = "The room temperature extraordinary magnetoresistance (EMR) of a mesoscopic sensor structure prepared from an InSb quantum well of dimension 30 nm wide/spl times/100 nm high/spl times/3 /spl mu/m long is reported. The observed EMR is 4.75% at a relevant field of 0.05 T. The advantages and disadvantages of this nonmagnetic composite semiconductor/metal structure relative to that of conventional magnetic giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) devices for use as read-heads in high-density magnetic recording are discussed.",
keywords = "magnetoresistive devices, magnetoresistance, digital magnetic recording, indium compounds, semiconductor quantum wells, semiconductor-metal boundaries, III-V semiconductors, magnetic heads, sputter etching, electron beam lithography, room temperature extraordinary magnetoresistance, room temperature EMR, narrow-gap semiconductor/metal composites, mesoscopic sensor structure, InSb quantum well, nonmagnetic composite semiconductor/metal structure, read heads, ultrahigh-density magnetic recording, 30 nm, 100 nm, 3 micron, 0.05 T, InSb, Extraordinary magnetoresistance, Magnetic materials, Magnetic sensors, Temperature sensors, Giant magnetoresistance, Tunneling magnetoresistance, Colossal magnetoresistance, Semiconductor materials, Geometry, Magnetic recording",
author = "Solin, {S. A.} and Hines, {D. R.} and Jaw-Shen Tsai and Yuri Pashkin and Chung, {S. J.} and N. Goel and M. Santos",
year = "2002",
month = jan,
doi = "10.1109/TMAG.2002.988917",
language = "English",
volume = "38",
pages = "89--94",
journal = "IEEE Transactions on Magnetics",
issn = "0018-9464",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "1",

}

RIS

TY - JOUR

T1 - Room temperature extraordinary magnetoresistance of nonmagnetic narrow-gap semiconductor/metal composites

T2 - application to read-head sensors for ultrahigh-density magnetic recording

AU - Solin, S. A.

AU - Hines, D. R.

AU - Tsai, Jaw-Shen

AU - Pashkin, Yuri

AU - Chung, S. J.

AU - Goel, N.

AU - Santos, M.

PY - 2002/1

Y1 - 2002/1

N2 - The room temperature extraordinary magnetoresistance (EMR) of a mesoscopic sensor structure prepared from an InSb quantum well of dimension 30 nm wide/spl times/100 nm high/spl times/3 /spl mu/m long is reported. The observed EMR is 4.75% at a relevant field of 0.05 T. The advantages and disadvantages of this nonmagnetic composite semiconductor/metal structure relative to that of conventional magnetic giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) devices for use as read-heads in high-density magnetic recording are discussed.

AB - The room temperature extraordinary magnetoresistance (EMR) of a mesoscopic sensor structure prepared from an InSb quantum well of dimension 30 nm wide/spl times/100 nm high/spl times/3 /spl mu/m long is reported. The observed EMR is 4.75% at a relevant field of 0.05 T. The advantages and disadvantages of this nonmagnetic composite semiconductor/metal structure relative to that of conventional magnetic giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) devices for use as read-heads in high-density magnetic recording are discussed.

KW - magnetoresistive devices

KW - magnetoresistance

KW - digital magnetic recording

KW - indium compounds

KW - semiconductor quantum wells

KW - semiconductor-metal boundaries

KW - III-V semiconductors

KW - magnetic heads

KW - sputter etching

KW - electron beam lithography

KW - room temperature extraordinary magnetoresistance

KW - room temperature EMR

KW - narrow-gap semiconductor/metal composites

KW - mesoscopic sensor structure

KW - InSb quantum well

KW - nonmagnetic composite semiconductor/metal structure

KW - read heads

KW - ultrahigh-density magnetic recording

KW - 30 nm

KW - 100 nm

KW - 3 micron

KW - 0.05 T

KW - InSb

KW - Extraordinary magnetoresistance

KW - Magnetic materials

KW - Magnetic sensors

KW - Temperature sensors

KW - Giant magnetoresistance

KW - Tunneling magnetoresistance

KW - Colossal magnetoresistance

KW - Semiconductor materials

KW - Geometry

KW - Magnetic recording

U2 - 10.1109/TMAG.2002.988917

DO - 10.1109/TMAG.2002.988917

M3 - Journal article

VL - 38

SP - 89

EP - 94

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

SN - 0018-9464

IS - 1

ER -