Rights statement: Copyright 2020 American Institute of Physics. The following article appeared in Applied Physics Letters, 116, 2020 and may be found at http://dx.doi.org/10.1063/5.0002407 This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
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TY - JOUR
T1 - Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunneling diode
AU - Di Paola, D.M.
AU - Lu, Q.
AU - Repiso, E.
AU - Kesaria, M.
AU - Makarovsky, O.
AU - Krier, A.
AU - Patanè, A.
N1 - Copyright 2020 American Institute of Physics. The following article appeared in Applied Physics Letters, 116, 2020 and may be found at http://dx.doi.org/10.1063/5.0002407 This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
PY - 2020/4/6
Y1 - 2020/4/6
N2 - Light emitting diodes (LEDs) in the mid-infrared (MIR) spectral range require material systems with tailored optical absorption and emission at wavelengths lambda > 2 mu m. Here, we report on MIR LEDs based on In(AsN)/(InAl)As resonant tunneling diodes (RTDs). The N-atoms lead to the formation of localized deep levels in the In(AsN) quantum well (QW) layer of the RTD. This has two main effects on the electroluminescence (EL) emission. By electrical injection of carriers into the N-related levels, EL emission is achieved at wavelengths significantly larger than for the QW emission (lambda similar to 3 mu m), extending the output of the diode to lambda similar to 5 mu m. Furthermore, for applied voltages well below the flatband condition of the diode, EL emission is observed at energies much larger than those supplied by the applied voltage and/or thermal energy, with an energy gain Delta E>0.2eV at room temperature. We attribute this upconversion luminescence to an Auger-like recombination process.
AB - Light emitting diodes (LEDs) in the mid-infrared (MIR) spectral range require material systems with tailored optical absorption and emission at wavelengths lambda > 2 mu m. Here, we report on MIR LEDs based on In(AsN)/(InAl)As resonant tunneling diodes (RTDs). The N-atoms lead to the formation of localized deep levels in the In(AsN) quantum well (QW) layer of the RTD. This has two main effects on the electroluminescence (EL) emission. By electrical injection of carriers into the N-related levels, EL emission is achieved at wavelengths significantly larger than for the QW emission (lambda similar to 3 mu m), extending the output of the diode to lambda similar to 5 mu m. Furthermore, for applied voltages well below the flatband condition of the diode, EL emission is observed at energies much larger than those supplied by the applied voltage and/or thermal energy, with an energy gain Delta E>0.2eV at room temperature. We attribute this upconversion luminescence to an Auger-like recombination process.
KW - Charge injection
KW - Diodes
KW - Electroluminescence
KW - Indium compounds
KW - Infrared devices
KW - Light
KW - Light absorption
KW - Light emitting diodes
KW - Resonant tunneling
KW - Semiconductor quantum wells
KW - Temperature measuring instruments
KW - Electrical injection
KW - Electroluminescence emission
KW - Flatband conditions
KW - Material systems
KW - Optical absorption and emission
KW - Recombination process
KW - Tunneling diodes
KW - Up-conversion luminescence
KW - Resonant tunneling diodes
U2 - 10.1063/5.0002407
DO - 10.1063/5.0002407
M3 - Journal article
VL - 116
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 14
M1 - 142108
ER -