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Room-temperature Al single-electron transistor made by electron-beam lithography

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<mark>Journal publication date</mark>17/04/2000
<mark>Journal</mark>Applied Physics Letters
Issue number16
Volume76
Number of pages3
Pages (from-to)2256-2258
Publication StatusPublished
<mark>Original language</mark>English

Abstract

We present a lithographically made Al single-electron transistor that shows gate modulation at room
temperature. The temperature dependence of the modulation agrees with the orthodox theory,
however, energy-level quantization in a tiny metallic island affects the device characteristics below
30 K. The charge-equivalent noise of the device at 300 K was measured to be ;431022 e/Hz1/2 at
1 Hz and is expected to be 1000 times lower in the white-noise regime at higher frequencies.