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Room-temperature Al single-electron transistor made by electron-beam lithography

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Room-temperature Al single-electron transistor made by electron-beam lithography. / Pashkin, Yuri; Nakamura, Y.; Tsai, Jaw-Shen.
In: Applied Physics Letters, Vol. 76, No. 16, 17.04.2000, p. 2256-2258.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Pashkin, Y, Nakamura, Y & Tsai, J-S 2000, 'Room-temperature Al single-electron transistor made by electron-beam lithography', Applied Physics Letters, vol. 76, no. 16, pp. 2256-2258. https://doi.org/10.1063/1.126313

APA

Pashkin, Y., Nakamura, Y., & Tsai, J.-S. (2000). Room-temperature Al single-electron transistor made by electron-beam lithography. Applied Physics Letters, 76(16), 2256-2258. https://doi.org/10.1063/1.126313

Vancouver

Pashkin Y, Nakamura Y, Tsai JS. Room-temperature Al single-electron transistor made by electron-beam lithography. Applied Physics Letters. 2000 Apr 17;76(16):2256-2258. doi: 10.1063/1.126313

Author

Pashkin, Yuri ; Nakamura, Y. ; Tsai, Jaw-Shen. / Room-temperature Al single-electron transistor made by electron-beam lithography. In: Applied Physics Letters. 2000 ; Vol. 76, No. 16. pp. 2256-2258.

Bibtex

@article{2fb392b0840446a4893d9938290db86d,
title = "Room-temperature Al single-electron transistor made by electron-beam lithography",
abstract = "We present a lithographically made Al single-electron transistor that shows gate modulation at roomtemperature. The temperature dependence of the modulation agrees with the orthodox theory,however, energy-level quantization in a tiny metallic island affects the device characteristics below30 K. The charge-equivalent noise of the device at 300 K was measured to be ;431022 e/Hz1/2 at1 Hz and is expected to be 1000 times lower in the white-noise regime at higher frequencies.",
author = "Yuri Pashkin and Y. Nakamura and Jaw-Shen Tsai",
year = "2000",
month = apr,
day = "17",
doi = "10.1063/1.126313",
language = "English",
volume = "76",
pages = "2256--2258",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "16",

}

RIS

TY - JOUR

T1 - Room-temperature Al single-electron transistor made by electron-beam lithography

AU - Pashkin, Yuri

AU - Nakamura, Y.

AU - Tsai, Jaw-Shen

PY - 2000/4/17

Y1 - 2000/4/17

N2 - We present a lithographically made Al single-electron transistor that shows gate modulation at roomtemperature. The temperature dependence of the modulation agrees with the orthodox theory,however, energy-level quantization in a tiny metallic island affects the device characteristics below30 K. The charge-equivalent noise of the device at 300 K was measured to be ;431022 e/Hz1/2 at1 Hz and is expected to be 1000 times lower in the white-noise regime at higher frequencies.

AB - We present a lithographically made Al single-electron transistor that shows gate modulation at roomtemperature. The temperature dependence of the modulation agrees with the orthodox theory,however, energy-level quantization in a tiny metallic island affects the device characteristics below30 K. The charge-equivalent noise of the device at 300 K was measured to be ;431022 e/Hz1/2 at1 Hz and is expected to be 1000 times lower in the white-noise regime at higher frequencies.

U2 - 10.1063/1.126313

DO - 10.1063/1.126313

M3 - Journal article

VL - 76

SP - 2256

EP - 2258

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 16

ER -