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Self-catalysed growth of InAs nanowires on bare Si substrates by droplet epitaxy

Research output: Contribution to Journal/MagazineJournal articlepeer-review

<mark>Journal publication date</mark>11/07/2014
<mark>Journal</mark>physica status solidi (RRL) - Rapid Research Letters
Issue number7
Number of pages5
Pages (from-to)658–662
Publication StatusPublished
<mark>Original language</mark>English


We demonstrate the self-catalyst growth of vertically aligned InAs nanowires on bare Si(111) by droplet epitaxy. The growth conditions of indium droplets suitable for nucleation and growth of nanowires have been identified. We have then realized vertically aligned and non-tapered InAs nanowires on bare Si(111) substrates through optimal indium droplets. It was found that the lateral dimensions and density of nano-wires are defined by the indium droplets. This technique unravels a controllable, cost-effective and time-efficient route to fabricating functional monolithic hybrid structures of InAs nanowires on silicon.