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Self-catalysed growth of InAs nanowires on bare Si substrates by droplet epitaxy

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Self-catalysed growth of InAs nanowires on bare Si substrates by droplet epitaxy. / Anyebe, Ezekiel; Zhuang, Qiandong; Sanchez, A. M. et al.

In: physica status solidi (RRL) - Rapid Research Letters, Vol. 8, No. 7, 11.07.2014, p. 658–662.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Anyebe, E, Zhuang, Q, Sanchez, AM, Lawson, S, Robson, A, Ponomarenko, LA, Zhukov, A & Kolosov, O 2014, 'Self-catalysed growth of InAs nanowires on bare Si substrates by droplet epitaxy', physica status solidi (RRL) - Rapid Research Letters, vol. 8, no. 7, pp. 658–662. https://doi.org/10.1002/pssr.201409106

APA

Anyebe, E., Zhuang, Q., Sanchez, A. M., Lawson, S., Robson, A., Ponomarenko, L. A., Zhukov, A., & Kolosov, O. (2014). Self-catalysed growth of InAs nanowires on bare Si substrates by droplet epitaxy. physica status solidi (RRL) - Rapid Research Letters, 8(7), 658–662. https://doi.org/10.1002/pssr.201409106

Vancouver

Anyebe E, Zhuang Q, Sanchez AM, Lawson S, Robson A, Ponomarenko LA et al. Self-catalysed growth of InAs nanowires on bare Si substrates by droplet epitaxy. physica status solidi (RRL) - Rapid Research Letters. 2014 Jul 11;8(7):658–662. doi: 10.1002/pssr.201409106

Author

Anyebe, Ezekiel ; Zhuang, Qiandong ; Sanchez, A. M. et al. / Self-catalysed growth of InAs nanowires on bare Si substrates by droplet epitaxy. In: physica status solidi (RRL) - Rapid Research Letters. 2014 ; Vol. 8, No. 7. pp. 658–662.

Bibtex

@article{7e587c671608428ca223e2bf0a7cff6d,
title = "Self-catalysed growth of InAs nanowires on bare Si substrates by droplet epitaxy",
abstract = "We demonstrate the self-catalyst growth of vertically aligned InAs nanowires on bare Si(111) by droplet epitaxy. The growth conditions of indium droplets suitable for nucleation and growth of nanowires have been identified. We have then realized vertically aligned and non-tapered InAs nanowires on bare Si(111) substrates through optimal indium droplets. It was found that the lateral dimensions and density of nano-wires are defined by the indium droplets. This technique unravels a controllable, cost-effective and time-efficient route to fabricating functional monolithic hybrid structures of InAs nanowires on silicon.",
keywords = "self-catalysed growth, InAs , nanowires , bare silicon , droplet epitaxy",
author = "Ezekiel Anyebe and Qiandong Zhuang and Sanchez, {A. M.} and Stuart Lawson and Alexander Robson and Ponomarenko, {L. A.} and Alexander Zhukov and Oleg Kolosov",
year = "2014",
month = jul,
day = "11",
doi = "10.1002/pssr.201409106",
language = "English",
volume = "8",
pages = "658–662",
journal = "physica status solidi (RRL) - Rapid Research Letters",
issn = "1862-6254",
publisher = "Wiley-VCH Verlag",
number = "7",

}

RIS

TY - JOUR

T1 - Self-catalysed growth of InAs nanowires on bare Si substrates by droplet epitaxy

AU - Anyebe, Ezekiel

AU - Zhuang, Qiandong

AU - Sanchez, A. M.

AU - Lawson, Stuart

AU - Robson, Alexander

AU - Ponomarenko, L. A.

AU - Zhukov, Alexander

AU - Kolosov, Oleg

PY - 2014/7/11

Y1 - 2014/7/11

N2 - We demonstrate the self-catalyst growth of vertically aligned InAs nanowires on bare Si(111) by droplet epitaxy. The growth conditions of indium droplets suitable for nucleation and growth of nanowires have been identified. We have then realized vertically aligned and non-tapered InAs nanowires on bare Si(111) substrates through optimal indium droplets. It was found that the lateral dimensions and density of nano-wires are defined by the indium droplets. This technique unravels a controllable, cost-effective and time-efficient route to fabricating functional monolithic hybrid structures of InAs nanowires on silicon.

AB - We demonstrate the self-catalyst growth of vertically aligned InAs nanowires on bare Si(111) by droplet epitaxy. The growth conditions of indium droplets suitable for nucleation and growth of nanowires have been identified. We have then realized vertically aligned and non-tapered InAs nanowires on bare Si(111) substrates through optimal indium droplets. It was found that the lateral dimensions and density of nano-wires are defined by the indium droplets. This technique unravels a controllable, cost-effective and time-efficient route to fabricating functional monolithic hybrid structures of InAs nanowires on silicon.

KW - self-catalysed growth

KW - InAs

KW - nanowires

KW - bare silicon

KW - droplet epitaxy

U2 - 10.1002/pssr.201409106

DO - 10.1002/pssr.201409106

M3 - Journal article

VL - 8

SP - 658

EP - 662

JO - physica status solidi (RRL) - Rapid Research Letters

JF - physica status solidi (RRL) - Rapid Research Letters

SN - 1862-6254

IS - 7

ER -