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    Rights statement: Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 106 (20), 2015 and may be found at http://scitation.aip.org/content/aip/journal/apl/106/20/10.1063/1.4921468

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Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb

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Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb. / Craig, Adam; Jain, M.; Wicks, G. et al.

In: Applied Physics Letters, Vol. 106, No. 20, 201103, 20.05.2015.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Craig, A, Jain, M, Wicks, G, Golding, T, Hossain, K, McEwan, K, Howle, C, Percy, B & Marshall, A 2015, 'Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb', Applied Physics Letters, vol. 106, no. 20, 201103. https://doi.org/10.1063/1.4921468

APA

Craig, A., Jain, M., Wicks, G., Golding, T., Hossain, K., McEwan, K., Howle, C., Percy, B., & Marshall, A. (2015). Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb. Applied Physics Letters, 106(20), [201103]. https://doi.org/10.1063/1.4921468

Vancouver

Craig A, Jain M, Wicks G, Golding T, Hossain K, McEwan K et al. Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb. Applied Physics Letters. 2015 May 20;106(20):201103. doi: 10.1063/1.4921468

Author

Craig, Adam ; Jain, M. ; Wicks, G. et al. / Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb. In: Applied Physics Letters. 2015 ; Vol. 106, No. 20.

Bibtex

@article{d2cf7e634b6646d6a0a262d76b49cd11,
title = "Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb",
abstract = "Short-wave infrared barriode detectors were grown by molecular beam epitaxy. An absorption layer composition of In0.28Ga0.72As0.25Sb0.75 allowed for lattice matching to GaSb and cut-off wavelengths of 2.9 μm at 250 K and 3.0 μm at room temperature. Arrhenius plots of the dark current density showed diffusion limited dark currents approaching those expected for optimized HgCdTe-based detectors. Specific detectivity figures of around 7×1010 Jones and 1×1010 Jones were calculated, for 240 K and room temperature, respectively. Significantly, these devices could support focal plane arrays working at higher operating temperatures.",
author = "Adam Craig and M. Jain and G. Wicks and T. Golding and K. Hossain and K. McEwan and C. Howle and B. Percy and Andrew Marshall",
note = "Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 106 (20), 2015 and may be found at http://scitation.aip.org/content/aip/journal/apl/106/20/10.1063/1.4921468",
year = "2015",
month = may,
day = "20",
doi = "10.1063/1.4921468",
language = "English",
volume = "106",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "20",

}

RIS

TY - JOUR

T1 - Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb

AU - Craig, Adam

AU - Jain, M.

AU - Wicks, G.

AU - Golding, T.

AU - Hossain, K.

AU - McEwan, K.

AU - Howle, C.

AU - Percy, B.

AU - Marshall, Andrew

N1 - Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 106 (20), 2015 and may be found at http://scitation.aip.org/content/aip/journal/apl/106/20/10.1063/1.4921468

PY - 2015/5/20

Y1 - 2015/5/20

N2 - Short-wave infrared barriode detectors were grown by molecular beam epitaxy. An absorption layer composition of In0.28Ga0.72As0.25Sb0.75 allowed for lattice matching to GaSb and cut-off wavelengths of 2.9 μm at 250 K and 3.0 μm at room temperature. Arrhenius plots of the dark current density showed diffusion limited dark currents approaching those expected for optimized HgCdTe-based detectors. Specific detectivity figures of around 7×1010 Jones and 1×1010 Jones were calculated, for 240 K and room temperature, respectively. Significantly, these devices could support focal plane arrays working at higher operating temperatures.

AB - Short-wave infrared barriode detectors were grown by molecular beam epitaxy. An absorption layer composition of In0.28Ga0.72As0.25Sb0.75 allowed for lattice matching to GaSb and cut-off wavelengths of 2.9 μm at 250 K and 3.0 μm at room temperature. Arrhenius plots of the dark current density showed diffusion limited dark currents approaching those expected for optimized HgCdTe-based detectors. Specific detectivity figures of around 7×1010 Jones and 1×1010 Jones were calculated, for 240 K and room temperature, respectively. Significantly, these devices could support focal plane arrays working at higher operating temperatures.

U2 - 10.1063/1.4921468

DO - 10.1063/1.4921468

M3 - Journal article

VL - 106

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 20

M1 - 201103

ER -