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    Rights statement: D. E. Presnov, A. A. Dorofeev, I. V. Bozhev, A. S. Trifonov, S. G. Kafanov, Yu. A. Pashkin, V. A. Krupenin, "Silicon nanobridge as a high quality mechanical resonator," Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 110220V (15 March 2019) Copyright notice format: Copyright 2019 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited. DOI abstract link format: http://dx.doi.org/10.1117/12.2521034

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Silicon nanobridge as a high quality mechanical resonator

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Silicon nanobridge as a high quality mechanical resonator. / Presnov, D. E.; Dorofeev, A. A.; Bozhev, I. V. et al.
In: Proceedings of SPIE, Vol. 11022, 15.03.2019.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Presnov, DE, Dorofeev, AA, Bozhev, IV, Trifonov, AS, Kafanov, SG, Pashkin, YA & Krupenin, VA 2019, 'Silicon nanobridge as a high quality mechanical resonator', Proceedings of SPIE, vol. 11022. https://doi.org/10.1117/12.2521034

APA

Presnov, D. E., Dorofeev, A. A., Bozhev, I. V., Trifonov, A. S., Kafanov, S. G., Pashkin, Y. A., & Krupenin, V. A. (2019). Silicon nanobridge as a high quality mechanical resonator. Proceedings of SPIE, 11022. https://doi.org/10.1117/12.2521034

Vancouver

Presnov DE, Dorofeev AA, Bozhev IV, Trifonov AS, Kafanov SG, Pashkin YA et al. Silicon nanobridge as a high quality mechanical resonator. Proceedings of SPIE. 2019 Mar 15;11022. doi: 10.1117/12.2521034

Author

Presnov, D. E. ; Dorofeev, A. A. ; Bozhev, I. V. et al. / Silicon nanobridge as a high quality mechanical resonator. In: Proceedings of SPIE. 2019 ; Vol. 11022.

Bibtex

@article{e3b6a5bbc7ba42f6bdaefdc839625877,
title = "Silicon nanobridge as a high quality mechanical resonator",
abstract = "The paper presents details of the fabricating technology of nanoscale mechanical resonators based on suspended silicon nanowires. The structures were made from silicon on insulator material, the thickness of the upper layer of silicon is 110 nm, the thickness of silicon oxide is 200 nm. Fabrication process contains standard CMOS compatible technologies only: Electron lithography with positive resist, reactive ion and liquid etching, electron beam deposition of thin films. The presented structures can be used as sensors of mass, displacement, acceleration, pressure with extremely high sensitivity.",
keywords = "Nanoelectromechanical systems (NEMS), nanoresonator, nanowire, solicon-on-insulator (SOI)",
author = "Presnov, {D. E.} and Dorofeev, {A. A.} and Bozhev, {I. V.} and Trifonov, {A. S.} and Kafanov, {S. G.} and Pashkin, {Yu A.} and Krupenin, {V. A.}",
note = "D. E. Presnov, A. A. Dorofeev, I. V. Bozhev, A. S. Trifonov, S. G. Kafanov, Yu. A. Pashkin, V. A. Krupenin, {"}Silicon nanobridge as a high quality mechanical resonator,{"} Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 110220V (15 March 2019) Copyright notice format: Copyright 2019 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited. DOI abstract link format: http://dx.doi.org/10.1117/12.2521034 ; International Conference on Micro- and Nano-Electronics 2018, ICMNE 2018 ; Conference date: 01-10-2018 Through 05-10-2018",
year = "2019",
month = mar,
day = "15",
doi = "10.1117/12.2521034",
language = "English",
volume = "11022",
journal = "Proceedings of SPIE",
issn = "0277-786X",
publisher = "SPIE",

}

RIS

TY - JOUR

T1 - Silicon nanobridge as a high quality mechanical resonator

AU - Presnov, D. E.

AU - Dorofeev, A. A.

AU - Bozhev, I. V.

AU - Trifonov, A. S.

AU - Kafanov, S. G.

AU - Pashkin, Yu A.

AU - Krupenin, V. A.

N1 - D. E. Presnov, A. A. Dorofeev, I. V. Bozhev, A. S. Trifonov, S. G. Kafanov, Yu. A. Pashkin, V. A. Krupenin, "Silicon nanobridge as a high quality mechanical resonator," Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 110220V (15 March 2019) Copyright notice format: Copyright 2019 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited. DOI abstract link format: http://dx.doi.org/10.1117/12.2521034

PY - 2019/3/15

Y1 - 2019/3/15

N2 - The paper presents details of the fabricating technology of nanoscale mechanical resonators based on suspended silicon nanowires. The structures were made from silicon on insulator material, the thickness of the upper layer of silicon is 110 nm, the thickness of silicon oxide is 200 nm. Fabrication process contains standard CMOS compatible technologies only: Electron lithography with positive resist, reactive ion and liquid etching, electron beam deposition of thin films. The presented structures can be used as sensors of mass, displacement, acceleration, pressure with extremely high sensitivity.

AB - The paper presents details of the fabricating technology of nanoscale mechanical resonators based on suspended silicon nanowires. The structures were made from silicon on insulator material, the thickness of the upper layer of silicon is 110 nm, the thickness of silicon oxide is 200 nm. Fabrication process contains standard CMOS compatible technologies only: Electron lithography with positive resist, reactive ion and liquid etching, electron beam deposition of thin films. The presented structures can be used as sensors of mass, displacement, acceleration, pressure with extremely high sensitivity.

KW - Nanoelectromechanical systems (NEMS)

KW - nanoresonator

KW - nanowire

KW - solicon-on-insulator (SOI)

U2 - 10.1117/12.2521034

DO - 10.1117/12.2521034

M3 - Journal article

AN - SCOPUS:85063453987

VL - 11022

JO - Proceedings of SPIE

JF - Proceedings of SPIE

SN - 0277-786X

T2 - International Conference on Micro- and Nano-Electronics 2018, ICMNE 2018

Y2 - 1 October 2018 through 5 October 2018

ER -