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Silicon photosensitisation using molecular layers

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Silicon photosensitisation using molecular layers. / Danos, Lefteris; Halcovitch, Nathan R; Wood, Ben et al.
In: Faraday Discussions, Vol. 222, 19.06.2020, p. 405-423.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Danos, L, Halcovitch, NR, Wood, B, Banks, H, Coogan, MP, Alderman, N, Fang, L, Dzurnak, B & Markvart, T 2020, 'Silicon photosensitisation using molecular layers', Faraday Discussions, vol. 222, pp. 405-423. https://doi.org/10.1039/c9fd00095j

APA

Danos, L., Halcovitch, N. R., Wood, B., Banks, H., Coogan, M. P., Alderman, N., Fang, L., Dzurnak, B., & Markvart, T. (2020). Silicon photosensitisation using molecular layers. Faraday Discussions, 222, 405-423. https://doi.org/10.1039/c9fd00095j

Vancouver

Danos L, Halcovitch NR, Wood B, Banks H, Coogan MP, Alderman N et al. Silicon photosensitisation using molecular layers. Faraday Discussions. 2020 Jun 19;222:405-423. Epub 2019 Nov 12. doi: 10.1039/c9fd00095j

Author

Danos, Lefteris ; Halcovitch, Nathan R ; Wood, Ben et al. / Silicon photosensitisation using molecular layers. In: Faraday Discussions. 2020 ; Vol. 222. pp. 405-423.

Bibtex

@article{607ef84db10a4e3881612451f32450e5,
title = "Silicon photosensitisation using molecular layers",
abstract = "Silicon photosensitisation via energy transfer from molecular dye layers is a promising area of research for excitonic silicon photovoltaics. We present the synthesis and photophysical characterisation of vinyl and allyl terminated Si(111) surfaces decorated with perylene molecules. The functionalised silicon surfaces together with Langmuir-Blodgett (LB) films based on perylene derivatives were studied using a wide range of steady-state and time resolved spectroscopic techniques. Fluorescence lifetime quenching experiments performed on the perylene modified monolayers revealed energy transfer efficiencies to silicon of up to 90 per cent. We present a simple model to account for the near field interaction of a dipole emitter with the silicon surface and distinguish between the 'true' FRET region (<5 nm) and a different process, photon tunnelling, occurring for distances between 10-50 nm. The requirements for a future ultra-thin crystalline solar cell paradigm include efficient surface passivation and keeping a close distance between the emitter dipole and the surface. These are discussed in the context of existing limitations and questions raised about the finer details of the emitter-silicon interaction.",
author = "Lefteris Danos and Halcovitch, {Nathan R} and Ben Wood and Henry Banks and Coogan, {Michael P} and Nicholas Alderman and Liping Fang and Branislav Dzurnak and Tom Markvart",
year = "2020",
month = jun,
day = "19",
doi = "10.1039/c9fd00095j",
language = "English",
volume = "222",
pages = "405--423",
journal = "Faraday Discussions",
issn = "1359-6640",
publisher = "ROYAL SOC CHEMISTRY",

}

RIS

TY - JOUR

T1 - Silicon photosensitisation using molecular layers

AU - Danos, Lefteris

AU - Halcovitch, Nathan R

AU - Wood, Ben

AU - Banks, Henry

AU - Coogan, Michael P

AU - Alderman, Nicholas

AU - Fang, Liping

AU - Dzurnak, Branislav

AU - Markvart, Tom

PY - 2020/6/19

Y1 - 2020/6/19

N2 - Silicon photosensitisation via energy transfer from molecular dye layers is a promising area of research for excitonic silicon photovoltaics. We present the synthesis and photophysical characterisation of vinyl and allyl terminated Si(111) surfaces decorated with perylene molecules. The functionalised silicon surfaces together with Langmuir-Blodgett (LB) films based on perylene derivatives were studied using a wide range of steady-state and time resolved spectroscopic techniques. Fluorescence lifetime quenching experiments performed on the perylene modified monolayers revealed energy transfer efficiencies to silicon of up to 90 per cent. We present a simple model to account for the near field interaction of a dipole emitter with the silicon surface and distinguish between the 'true' FRET region (<5 nm) and a different process, photon tunnelling, occurring for distances between 10-50 nm. The requirements for a future ultra-thin crystalline solar cell paradigm include efficient surface passivation and keeping a close distance between the emitter dipole and the surface. These are discussed in the context of existing limitations and questions raised about the finer details of the emitter-silicon interaction.

AB - Silicon photosensitisation via energy transfer from molecular dye layers is a promising area of research for excitonic silicon photovoltaics. We present the synthesis and photophysical characterisation of vinyl and allyl terminated Si(111) surfaces decorated with perylene molecules. The functionalised silicon surfaces together with Langmuir-Blodgett (LB) films based on perylene derivatives were studied using a wide range of steady-state and time resolved spectroscopic techniques. Fluorescence lifetime quenching experiments performed on the perylene modified monolayers revealed energy transfer efficiencies to silicon of up to 90 per cent. We present a simple model to account for the near field interaction of a dipole emitter with the silicon surface and distinguish between the 'true' FRET region (<5 nm) and a different process, photon tunnelling, occurring for distances between 10-50 nm. The requirements for a future ultra-thin crystalline solar cell paradigm include efficient surface passivation and keeping a close distance between the emitter dipole and the surface. These are discussed in the context of existing limitations and questions raised about the finer details of the emitter-silicon interaction.

U2 - 10.1039/c9fd00095j

DO - 10.1039/c9fd00095j

M3 - Journal article

C2 - 32115600

VL - 222

SP - 405

EP - 423

JO - Faraday Discussions

JF - Faraday Discussions

SN - 1359-6640

ER -