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Simulations of charge collection of a gallium nitride based pin thin-film neutron detector

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Article numberC08013
<mark>Journal publication date</mark>18/08/2022
<mark>Journal</mark>Journal of Instrumentation
Issue number8
Number of pages7
Publication StatusPublished
<mark>Original language</mark>English


The development of new fast neutron reactors and nuclear fusion reactors requires new neutron detectors in extreme environments. Due to its wide bandgap (3.4 eV) and radiation resistance capability, gallium nitride (GaN) is a candidate for neutron detection in extreme environments. This study introduces a novel simulation method of charge collection efficiency (CCE) for GaN pin thin-film neutron detector based on the Hecht equation and Monte Carlo simulation. A modified 2-carrier Hecht equation is used to simulate the CCE of the detector with a different depth depletion region. After obtaining the neutron energy deposition distribution in the sensitive volume of the detector, the Hecht equation is used to calculate the charge collection efficiency at different positions of the detector under a uniform electric field. The maximum relative error between the simulated CCE and the experimental CCE value is about 6.3%.