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Simulations of charge collection of a gallium nitride based pin thin-film neutron detector

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Simulations of charge collection of a gallium nitride based pin thin-film neutron detector. / Zhang, Zhongming; Aspinall, Michael.
In: Journal of Instrumentation, Vol. 17, No. 8, C08013, 18.08.2022.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

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Zhang Z, Aspinall M. Simulations of charge collection of a gallium nitride based pin thin-film neutron detector. Journal of Instrumentation. 2022 Aug 18;17(8):C08013. doi: 10.1088/1748-0221/17/08/C08013

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@article{da525b2adf974b85a73af2be876acfae,
title = "Simulations of charge collection of a gallium nitride based pin thin-film neutron detector",
abstract = "The development of new fast neutron reactors and nuclear fusion reactors requires new neutron detectors in extreme environments. Due to its wide bandgap (3.4 eV) and radiation resistance capability, gallium nitride (GaN) is a candidate for neutron detection in extreme environments. This study introduces a novel simulation method of charge collection efficiency (CCE) for GaN pin thin-film neutron detector based on the Hecht equation and Monte Carlo simulation. A modified 2-carrier Hecht equation is used to simulate the CCE of the detector with a different depth depletion region. After obtaining the neutron energy deposition distribution in the sensitive volume of the detector, the Hecht equation is used to calculate the charge collection efficiency at different positions of the detector under a uniform electric field. The maximum relative error between the simulated CCE and the experimental CCE value is about 6.3%.",
author = "Zhongming Zhang and Michael Aspinall",
year = "2022",
month = aug,
day = "18",
doi = "10.1088/1748-0221/17/08/C08013",
language = "English",
volume = "17",
journal = "Journal of Instrumentation",
issn = "1748-0221",
publisher = "Institute of Physics Publishing",
number = "8",

}

RIS

TY - JOUR

T1 - Simulations of charge collection of a gallium nitride based pin thin-film neutron detector

AU - Zhang, Zhongming

AU - Aspinall, Michael

PY - 2022/8/18

Y1 - 2022/8/18

N2 - The development of new fast neutron reactors and nuclear fusion reactors requires new neutron detectors in extreme environments. Due to its wide bandgap (3.4 eV) and radiation resistance capability, gallium nitride (GaN) is a candidate for neutron detection in extreme environments. This study introduces a novel simulation method of charge collection efficiency (CCE) for GaN pin thin-film neutron detector based on the Hecht equation and Monte Carlo simulation. A modified 2-carrier Hecht equation is used to simulate the CCE of the detector with a different depth depletion region. After obtaining the neutron energy deposition distribution in the sensitive volume of the detector, the Hecht equation is used to calculate the charge collection efficiency at different positions of the detector under a uniform electric field. The maximum relative error between the simulated CCE and the experimental CCE value is about 6.3%.

AB - The development of new fast neutron reactors and nuclear fusion reactors requires new neutron detectors in extreme environments. Due to its wide bandgap (3.4 eV) and radiation resistance capability, gallium nitride (GaN) is a candidate for neutron detection in extreme environments. This study introduces a novel simulation method of charge collection efficiency (CCE) for GaN pin thin-film neutron detector based on the Hecht equation and Monte Carlo simulation. A modified 2-carrier Hecht equation is used to simulate the CCE of the detector with a different depth depletion region. After obtaining the neutron energy deposition distribution in the sensitive volume of the detector, the Hecht equation is used to calculate the charge collection efficiency at different positions of the detector under a uniform electric field. The maximum relative error between the simulated CCE and the experimental CCE value is about 6.3%.

U2 - 10.1088/1748-0221/17/08/C08013

DO - 10.1088/1748-0221/17/08/C08013

M3 - Journal article

VL - 17

JO - Journal of Instrumentation

JF - Journal of Instrumentation

SN - 1748-0221

IS - 8

M1 - C08013

ER -