Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
| Publication date | 2005 |
|---|---|
| Host publication | IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest |
| Pages | 467-470 |
| Number of pages | 4 |
| Volume | 2005 |
| <mark>Original language</mark> | English |
| Event | IEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States Duration: 5/12/2005 → 7/12/2005 |
| Conference | IEEE International Electron Devices Meeting, 2005 IEDM |
|---|---|
| Country/Territory | United States |
| City | Washington, DC, MD |
| Period | 5/12/05 → 7/12/05 |
| Conference | IEEE International Electron Devices Meeting, 2005 IEDM |
|---|---|
| Country/Territory | United States |
| City | Washington, DC, MD |
| Period | 5/12/05 → 7/12/05 |
We have studied low temperature electron transport in three terminal single molecule transistors. Devices with OPV revealed a relation between transistor characteristics and position of molecular redox potentials strongly influenced by proximity to the metal. Fullerene based devices demonstrate negative differential resistance and indicate strong coupling of fullerene to gold.