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Single molecular devices with fullerenes and OligoPhenyleneVinylene (OPV) derivatives

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

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Single molecular devices with fullerenes and OligoPhenyleneVinylene (OPV) derivatives. / Danilov, Andrey V.; Kafanov, Sergey; Bjørnholm, Thomas et al.
IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest. Vol. 2005 2005. p. 467-470 1609381.

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

Harvard

Danilov, AV, Kafanov, S, Bjørnholm, T & Kubatkin, SE 2005, Single molecular devices with fullerenes and OligoPhenyleneVinylene (OPV) derivatives. in IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest. vol. 2005, 1609381, pp. 467-470, IEEE International Electron Devices Meeting, 2005 IEDM, Washington, DC, MD, United States, 5/12/05. https://doi.org/10.1109/IEDM.2005.1609381

APA

Danilov, A. V., Kafanov, S., Bjørnholm, T., & Kubatkin, S. E. (2005). Single molecular devices with fullerenes and OligoPhenyleneVinylene (OPV) derivatives. In IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest (Vol. 2005, pp. 467-470). Article 1609381 https://doi.org/10.1109/IEDM.2005.1609381

Vancouver

Danilov AV, Kafanov S, Bjørnholm T, Kubatkin SE. Single molecular devices with fullerenes and OligoPhenyleneVinylene (OPV) derivatives. In IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest. Vol. 2005. 2005. p. 467-470. 1609381 doi: 10.1109/IEDM.2005.1609381

Author

Danilov, Andrey V. ; Kafanov, Sergey ; Bjørnholm, Thomas et al. / Single molecular devices with fullerenes and OligoPhenyleneVinylene (OPV) derivatives. IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest. Vol. 2005 2005. pp. 467-470

Bibtex

@inproceedings{833fb3f3c4154618b409fce27fa95def,
title = "Single molecular devices with fullerenes and OligoPhenyleneVinylene (OPV) derivatives",
abstract = "We have studied low temperature electron transport in three terminal single molecule transistors. Devices with OPV revealed a relation between transistor characteristics and position of molecular redox potentials strongly influenced by proximity to the metal. Fullerene based devices demonstrate negative differential resistance and indicate strong coupling of fullerene to gold.",
author = "Danilov, {Andrey V.} and Sergey Kafanov and Thomas Bj{\o}rnholm and Kubatkin, {Sergey E.}",
year = "2005",
doi = "10.1109/IEDM.2005.1609381",
language = "English",
isbn = "078039268X",
volume = "2005",
pages = "467--470",
booktitle = "IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest",
note = "IEEE International Electron Devices Meeting, 2005 IEDM ; Conference date: 05-12-2005 Through 07-12-2005",

}

RIS

TY - GEN

T1 - Single molecular devices with fullerenes and OligoPhenyleneVinylene (OPV) derivatives

AU - Danilov, Andrey V.

AU - Kafanov, Sergey

AU - Bjørnholm, Thomas

AU - Kubatkin, Sergey E.

PY - 2005

Y1 - 2005

N2 - We have studied low temperature electron transport in three terminal single molecule transistors. Devices with OPV revealed a relation between transistor characteristics and position of molecular redox potentials strongly influenced by proximity to the metal. Fullerene based devices demonstrate negative differential resistance and indicate strong coupling of fullerene to gold.

AB - We have studied low temperature electron transport in three terminal single molecule transistors. Devices with OPV revealed a relation between transistor characteristics and position of molecular redox potentials strongly influenced by proximity to the metal. Fullerene based devices demonstrate negative differential resistance and indicate strong coupling of fullerene to gold.

U2 - 10.1109/IEDM.2005.1609381

DO - 10.1109/IEDM.2005.1609381

M3 - Conference contribution/Paper

AN - SCOPUS:33847693923

SN - 078039268X

SN - 9780780392687

VL - 2005

SP - 467

EP - 470

BT - IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest

T2 - IEEE International Electron Devices Meeting, 2005 IEDM

Y2 - 5 December 2005 through 7 December 2005

ER -