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Solution-processed thin film transistors incorporating YSZ gate dielectrics processed at 400 °C

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Solution-processed thin film transistors incorporating YSZ gate dielectrics processed at 400 °C. / Antoniou, Giorgos; Halcovitch, Nathan R.; Mucientes, Marta et al.
In: APL Materials, Vol. 10, No. 3, 031109, 31.03.2022.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Antoniou, G, Halcovitch, NR, Mucientes, M, Milne, WI, Nathan, A, MacManus-Driscoll, JL, Kolosov, OV & Adamopoulos, G 2022, 'Solution-processed thin film transistors incorporating YSZ gate dielectrics processed at 400 °C', APL Materials, vol. 10, no. 3, 031109. https://doi.org/10.1063/5.0079195

APA

Antoniou, G., Halcovitch, N. R., Mucientes, M., Milne, W. I., Nathan, A., MacManus-Driscoll, J. L., Kolosov, O. V., & Adamopoulos, G. (2022). Solution-processed thin film transistors incorporating YSZ gate dielectrics processed at 400 °C. APL Materials, 10(3), Article 031109. https://doi.org/10.1063/5.0079195

Vancouver

Antoniou G, Halcovitch NR, Mucientes M, Milne WI, Nathan A, MacManus-Driscoll JL et al. Solution-processed thin film transistors incorporating YSZ gate dielectrics processed at 400 °C. APL Materials. 2022 Mar 31;10(3):031109. Epub 2022 Mar 14. doi: 10.1063/5.0079195

Author

Antoniou, Giorgos ; Halcovitch, Nathan R. ; Mucientes, Marta et al. / Solution-processed thin film transistors incorporating YSZ gate dielectrics processed at 400 °C. In: APL Materials. 2022 ; Vol. 10, No. 3.

Bibtex

@article{93c62be56d934dbf96fc2a642a06ab8f,
title = "Solution-processed thin film transistors incorporating YSZ gate dielectrics processed at 400 °C",
abstract = "This work investigates a solution process for yttria-stabilized zirconia (YSZ) thin film deposition involving the addition of yttria nanoparticles, at 400 ○C, in air. Different yttrium doping levels in the YSZ were studied and a wide range of optical, structural, surface, dielectric, and electronic transport properties were also investigated. An optimum yttrium doping level of 5% mol. resulted in the smoothest films (RRMS ∼ 0.5 nm), a wide bandgap (∼5.96 eV), a dielectric constant in excess of 26, and a leakage current of ∼0.3 nA cm−2 at 2 MV/cm. The solution-processed YSZ films were incorporated as gate dielectrics in thin films transistors with solution-processed In2O3 semiconducting channels. Excellent operational characteristics, such as negligible hysteresis, low operational voltages (5 V), electron mobility in excess of 36 cm2 V−1 s−1, high on/off current modulation ratio on the order of 107, and low interfacial trap density states (<1012 cm−2), were demonstrated. In addition, excellent film homogeneity was achieved over a large area (16 × 16 cm2), with both film thickness and capacitance deviation of <1.2%.",
author = "Giorgos Antoniou and Halcovitch, {Nathan R.} and Marta Mucientes and Milne, {William I.} and Arokia Nathan and MacManus-Driscoll, {Judith L.} and Kolosov, {Oleg V.} and George Adamopoulos",
year = "2022",
month = mar,
day = "31",
doi = "10.1063/5.0079195",
language = "English",
volume = "10",
journal = "APL Materials",
issn = "2166-532X",
publisher = "American Institute of Physics",
number = "3",

}

RIS

TY - JOUR

T1 - Solution-processed thin film transistors incorporating YSZ gate dielectrics processed at 400 °C

AU - Antoniou, Giorgos

AU - Halcovitch, Nathan R.

AU - Mucientes, Marta

AU - Milne, William I.

AU - Nathan, Arokia

AU - MacManus-Driscoll, Judith L.

AU - Kolosov, Oleg V.

AU - Adamopoulos, George

PY - 2022/3/31

Y1 - 2022/3/31

N2 - This work investigates a solution process for yttria-stabilized zirconia (YSZ) thin film deposition involving the addition of yttria nanoparticles, at 400 ○C, in air. Different yttrium doping levels in the YSZ were studied and a wide range of optical, structural, surface, dielectric, and electronic transport properties were also investigated. An optimum yttrium doping level of 5% mol. resulted in the smoothest films (RRMS ∼ 0.5 nm), a wide bandgap (∼5.96 eV), a dielectric constant in excess of 26, and a leakage current of ∼0.3 nA cm−2 at 2 MV/cm. The solution-processed YSZ films were incorporated as gate dielectrics in thin films transistors with solution-processed In2O3 semiconducting channels. Excellent operational characteristics, such as negligible hysteresis, low operational voltages (5 V), electron mobility in excess of 36 cm2 V−1 s−1, high on/off current modulation ratio on the order of 107, and low interfacial trap density states (<1012 cm−2), were demonstrated. In addition, excellent film homogeneity was achieved over a large area (16 × 16 cm2), with both film thickness and capacitance deviation of <1.2%.

AB - This work investigates a solution process for yttria-stabilized zirconia (YSZ) thin film deposition involving the addition of yttria nanoparticles, at 400 ○C, in air. Different yttrium doping levels in the YSZ were studied and a wide range of optical, structural, surface, dielectric, and electronic transport properties were also investigated. An optimum yttrium doping level of 5% mol. resulted in the smoothest films (RRMS ∼ 0.5 nm), a wide bandgap (∼5.96 eV), a dielectric constant in excess of 26, and a leakage current of ∼0.3 nA cm−2 at 2 MV/cm. The solution-processed YSZ films were incorporated as gate dielectrics in thin films transistors with solution-processed In2O3 semiconducting channels. Excellent operational characteristics, such as negligible hysteresis, low operational voltages (5 V), electron mobility in excess of 36 cm2 V−1 s−1, high on/off current modulation ratio on the order of 107, and low interfacial trap density states (<1012 cm−2), were demonstrated. In addition, excellent film homogeneity was achieved over a large area (16 × 16 cm2), with both film thickness and capacitance deviation of <1.2%.

U2 - 10.1063/5.0079195

DO - 10.1063/5.0079195

M3 - Journal article

VL - 10

JO - APL Materials

JF - APL Materials

SN - 2166-532X

IS - 3

M1 - 031109

ER -