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Spin transfer switching and low-field precession in exchange-biased spin valve nanopillars

Research output: Contribution to journalJournal articlepeer-review

  • M. C. Wu
  • A. Aziz
  • D. Morecroft
  • M. G. Blamire
  • M. C. Hickey
  • M. Ali
  • G. Burnell
  • B. J. Hickey
Article number142501
<mark>Journal publication date</mark>7/04/2008
<mark>Journal</mark>Applied Physics Letters
Issue number14
Number of pages3
Publication StatusPublished
<mark>Original language</mark>English


Using a three-dimensional focused ion beam lithography process, we have fabricated nanopillar devices that show spin transfer torque switching at zero external magnetic fields. Under a small in-plane external bias field, a field-dependent peak in the differential resistance versus current is observed similar to that reported in asymmetrical nanopillar devices. This is interpreted as evidence for the low-field excitation of spin waves, which in our case is attributed to a spin-scattering asymmetry enhanced by the IrMn exchange bias layer coupled to a relatively thin CoFe fixed layer. (c) 2008 American Institute of Physics.