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Spin transfer switching and low-field precession in exchange-biased spin valve nanopillars

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Spin transfer switching and low-field precession in exchange-biased spin valve nanopillars. / Wu, M. C.; Aziz, A.; Morecroft, D. et al.
In: Applied Physics Letters, Vol. 92, No. 14, 142501, 07.04.2008.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Wu, MC, Aziz, A, Morecroft, D, Blamire, MG, Hickey, MC, Ali, M, Burnell, G & Hickey, BJ 2008, 'Spin transfer switching and low-field precession in exchange-biased spin valve nanopillars', Applied Physics Letters, vol. 92, no. 14, 142501. https://doi.org/10.1063/1.2905816

APA

Wu, M. C., Aziz, A., Morecroft, D., Blamire, M. G., Hickey, M. C., Ali, M., Burnell, G., & Hickey, B. J. (2008). Spin transfer switching and low-field precession in exchange-biased spin valve nanopillars. Applied Physics Letters, 92(14), Article 142501. https://doi.org/10.1063/1.2905816

Vancouver

Wu MC, Aziz A, Morecroft D, Blamire MG, Hickey MC, Ali M et al. Spin transfer switching and low-field precession in exchange-biased spin valve nanopillars. Applied Physics Letters. 2008 Apr 7;92(14):142501. doi: 10.1063/1.2905816

Author

Wu, M. C. ; Aziz, A. ; Morecroft, D. et al. / Spin transfer switching and low-field precession in exchange-biased spin valve nanopillars. In: Applied Physics Letters. 2008 ; Vol. 92, No. 14.

Bibtex

@article{467adb647f734ec6b7a54d3c03c16a50,
title = "Spin transfer switching and low-field precession in exchange-biased spin valve nanopillars",
abstract = "Using a three-dimensional focused ion beam lithography process, we have fabricated nanopillar devices that show spin transfer torque switching at zero external magnetic fields. Under a small in-plane external bias field, a field-dependent peak in the differential resistance versus current is observed similar to that reported in asymmetrical nanopillar devices. This is interpreted as evidence for the low-field excitation of spin waves, which in our case is attributed to a spin-scattering asymmetry enhanced by the IrMn exchange bias layer coupled to a relatively thin CoFe fixed layer. (c) 2008 American Institute of Physics.",
keywords = "DEVICES, WAVES, EXCITATIONS, MAGNETIC MULTILAYER, ELECTRIC-CURRENT, FILMS",
author = "Wu, {M. C.} and A. Aziz and D. Morecroft and Blamire, {M. G.} and Hickey, {M. C.} and M. Ali and G. Burnell and Hickey, {B. J.}",
year = "2008",
month = apr,
day = "7",
doi = "10.1063/1.2905816",
language = "English",
volume = "92",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "14",

}

RIS

TY - JOUR

T1 - Spin transfer switching and low-field precession in exchange-biased spin valve nanopillars

AU - Wu, M. C.

AU - Aziz, A.

AU - Morecroft, D.

AU - Blamire, M. G.

AU - Hickey, M. C.

AU - Ali, M.

AU - Burnell, G.

AU - Hickey, B. J.

PY - 2008/4/7

Y1 - 2008/4/7

N2 - Using a three-dimensional focused ion beam lithography process, we have fabricated nanopillar devices that show spin transfer torque switching at zero external magnetic fields. Under a small in-plane external bias field, a field-dependent peak in the differential resistance versus current is observed similar to that reported in asymmetrical nanopillar devices. This is interpreted as evidence for the low-field excitation of spin waves, which in our case is attributed to a spin-scattering asymmetry enhanced by the IrMn exchange bias layer coupled to a relatively thin CoFe fixed layer. (c) 2008 American Institute of Physics.

AB - Using a three-dimensional focused ion beam lithography process, we have fabricated nanopillar devices that show spin transfer torque switching at zero external magnetic fields. Under a small in-plane external bias field, a field-dependent peak in the differential resistance versus current is observed similar to that reported in asymmetrical nanopillar devices. This is interpreted as evidence for the low-field excitation of spin waves, which in our case is attributed to a spin-scattering asymmetry enhanced by the IrMn exchange bias layer coupled to a relatively thin CoFe fixed layer. (c) 2008 American Institute of Physics.

KW - DEVICES

KW - WAVES

KW - EXCITATIONS

KW - MAGNETIC MULTILAYER

KW - ELECTRIC-CURRENT

KW - FILMS

U2 - 10.1063/1.2905816

DO - 10.1063/1.2905816

M3 - Journal article

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 14

M1 - 142501

ER -