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  • PhysRevB.90.245409

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Strain-induced modifications of transport in gated graphene nanoribbons

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Strain-induced modifications of transport in gated graphene nanoribbons. / Cosma, Diana; Mucha-Kruczynski, Marcin; Schomerus, Henning; Falko, Vladimir.

In: Physical Review B: Condensed Matter and Materials Physics, Vol. 90, 245409, 03.12.2014.

Research output: Contribution to journalJournal articlepeer-review

Harvard

Cosma, D, Mucha-Kruczynski, M, Schomerus, H & Falko, V 2014, 'Strain-induced modifications of transport in gated graphene nanoribbons', Physical Review B: Condensed Matter and Materials Physics, vol. 90, 245409. https://doi.org/10.1103/PhysRevB.90.245409

APA

Cosma, D., Mucha-Kruczynski, M., Schomerus, H., & Falko, V. (2014). Strain-induced modifications of transport in gated graphene nanoribbons. Physical Review B: Condensed Matter and Materials Physics, 90, [245409]. https://doi.org/10.1103/PhysRevB.90.245409

Vancouver

Cosma D, Mucha-Kruczynski M, Schomerus H, Falko V. Strain-induced modifications of transport in gated graphene nanoribbons. Physical Review B: Condensed Matter and Materials Physics. 2014 Dec 3;90. 245409. https://doi.org/10.1103/PhysRevB.90.245409

Author

Cosma, Diana ; Mucha-Kruczynski, Marcin ; Schomerus, Henning ; Falko, Vladimir. / Strain-induced modifications of transport in gated graphene nanoribbons. In: Physical Review B: Condensed Matter and Materials Physics. 2014 ; Vol. 90.

Bibtex

@article{62f087b35ec6469e97dad7f43d06c6c6,
title = "Strain-induced modifications of transport in gated graphene nanoribbons",
abstract = "We investigate the effects of homogeneous and inhomogeneous deformations and edge disorder on the conductance of gated graphene nanoribbons. Under increasing homogeneous strain the conductance of such devices initially decreases before it acquires a resonance structure and, finally, becomes completely suppressed at higher strain. Edge disorder induces mode mixing in the contact regions, which can restore the conductance to its ballistic value. The valley-antisymmetric pseudomagnetic field induced by inhomogeneous deformations leads to the formation of additional resonance states, which originate either from the coupling into Fabry-P{\'e}rot states that extend through the system or from the formation of states that are localized near the contacts, where the pseudomagnetic field is largest. In particular, the n=0 pseudo-Landau level manifests itself via two groups of conductance resonances close to the charge neutrality point.",
author = "Diana Cosma and Marcin Mucha-Kruczynski and Henning Schomerus and Vladimir Falko",
note = "{\textcopyright}2014 American Physical Society",
year = "2014",
month = dec,
day = "3",
doi = "10.1103/PhysRevB.90.245409",
language = "English",
volume = "90",
journal = "Physical Review B: Condensed Matter and Materials Physics",
issn = "1098-0121",
publisher = "AMER PHYSICAL SOC",

}

RIS

TY - JOUR

T1 - Strain-induced modifications of transport in gated graphene nanoribbons

AU - Cosma, Diana

AU - Mucha-Kruczynski, Marcin

AU - Schomerus, Henning

AU - Falko, Vladimir

N1 - ©2014 American Physical Society

PY - 2014/12/3

Y1 - 2014/12/3

N2 - We investigate the effects of homogeneous and inhomogeneous deformations and edge disorder on the conductance of gated graphene nanoribbons. Under increasing homogeneous strain the conductance of such devices initially decreases before it acquires a resonance structure and, finally, becomes completely suppressed at higher strain. Edge disorder induces mode mixing in the contact regions, which can restore the conductance to its ballistic value. The valley-antisymmetric pseudomagnetic field induced by inhomogeneous deformations leads to the formation of additional resonance states, which originate either from the coupling into Fabry-Pérot states that extend through the system or from the formation of states that are localized near the contacts, where the pseudomagnetic field is largest. In particular, the n=0 pseudo-Landau level manifests itself via two groups of conductance resonances close to the charge neutrality point.

AB - We investigate the effects of homogeneous and inhomogeneous deformations and edge disorder on the conductance of gated graphene nanoribbons. Under increasing homogeneous strain the conductance of such devices initially decreases before it acquires a resonance structure and, finally, becomes completely suppressed at higher strain. Edge disorder induces mode mixing in the contact regions, which can restore the conductance to its ballistic value. The valley-antisymmetric pseudomagnetic field induced by inhomogeneous deformations leads to the formation of additional resonance states, which originate either from the coupling into Fabry-Pérot states that extend through the system or from the formation of states that are localized near the contacts, where the pseudomagnetic field is largest. In particular, the n=0 pseudo-Landau level manifests itself via two groups of conductance resonances close to the charge neutrality point.

U2 - 10.1103/PhysRevB.90.245409

DO - 10.1103/PhysRevB.90.245409

M3 - Journal article

VL - 90

JO - Physical Review B: Condensed Matter and Materials Physics

JF - Physical Review B: Condensed Matter and Materials Physics

SN - 1098-0121

M1 - 245409

ER -