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Structures of bulk hexagonal post transition metal chalcogenides from dispersion-corrected density functional theory

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Structures of bulk hexagonal post transition metal chalcogenides from dispersion-corrected density functional theory. / Magorrian, Samuel; Zolyomi, Viktor; Drummond, Neil.
In: Physical Review B: Condensed Matter and Materials Physics, Vol. 103, No. 9, 094118, 31.03.2021.

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Magorrian S, Zolyomi V, Drummond N. Structures of bulk hexagonal post transition metal chalcogenides from dispersion-corrected density functional theory. Physical Review B: Condensed Matter and Materials Physics. 2021 Mar 31;103(9):094118. doi: 10.1103/PhysRevB.103.094118

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Magorrian, Samuel ; Zolyomi, Viktor ; Drummond, Neil. / Structures of bulk hexagonal post transition metal chalcogenides from dispersion-corrected density functional theory. In: Physical Review B: Condensed Matter and Materials Physics. 2021 ; Vol. 103, No. 9.

Bibtex

@article{13b21e3999d043a68ec9fbeccef54062,
title = "Structures of bulk hexagonal post transition metal chalcogenides from dispersion-corrected density functional theory",
abstract = "We use dispersion-corrected density functional theory to determine the relative energies of competing polytypes of bulk layered hexagonal post transition metal chalcogenides to search for the most stable structures of these potentially technologically important semiconductors. We show that there is some degree of consensus among dispersion-corrected exchange-correlation functionals regarding the energetic orderings of polytypes, but we find that for each material there are multiple stacking orders with relative energies of less than 1 meV per monolayer unit cell, implying that stacking faults are expected to be abundant in all post transition metal chalcogenides. By fitting a simple model to all our energy data, we predict that the most stable hexagonal structure has the P63/mmc space group in each case but that the stacking order differs between GaS, GaSe, GaTe, and InS, on the one hand, and InSe and InTe, on the other. At zero pressure, the relative energies obtained with different functionals disagree by around 1–5 meV per monolayer unit cell, which is not sufficient to identify the most stable structure unambiguously; however, multigigapascal pressures reduce the number of competing phases significantly. At higher pressures, an AB′-stacked structure of the most stable monolayer polytype is found to be the most stable bulk structure.",
author = "Samuel Magorrian and Viktor Zolyomi and Neil Drummond",
note = "{\textcopyright} 2021 American Physical Society ",
year = "2021",
month = mar,
day = "31",
doi = "10.1103/PhysRevB.103.094118",
language = "English",
volume = "103",
journal = "Physical Review B: Condensed Matter and Materials Physics",
issn = "1098-0121",
publisher = "AMER PHYSICAL SOC",
number = "9",

}

RIS

TY - JOUR

T1 - Structures of bulk hexagonal post transition metal chalcogenides from dispersion-corrected density functional theory

AU - Magorrian, Samuel

AU - Zolyomi, Viktor

AU - Drummond, Neil

N1 - © 2021 American Physical Society

PY - 2021/3/31

Y1 - 2021/3/31

N2 - We use dispersion-corrected density functional theory to determine the relative energies of competing polytypes of bulk layered hexagonal post transition metal chalcogenides to search for the most stable structures of these potentially technologically important semiconductors. We show that there is some degree of consensus among dispersion-corrected exchange-correlation functionals regarding the energetic orderings of polytypes, but we find that for each material there are multiple stacking orders with relative energies of less than 1 meV per monolayer unit cell, implying that stacking faults are expected to be abundant in all post transition metal chalcogenides. By fitting a simple model to all our energy data, we predict that the most stable hexagonal structure has the P63/mmc space group in each case but that the stacking order differs between GaS, GaSe, GaTe, and InS, on the one hand, and InSe and InTe, on the other. At zero pressure, the relative energies obtained with different functionals disagree by around 1–5 meV per monolayer unit cell, which is not sufficient to identify the most stable structure unambiguously; however, multigigapascal pressures reduce the number of competing phases significantly. At higher pressures, an AB′-stacked structure of the most stable monolayer polytype is found to be the most stable bulk structure.

AB - We use dispersion-corrected density functional theory to determine the relative energies of competing polytypes of bulk layered hexagonal post transition metal chalcogenides to search for the most stable structures of these potentially technologically important semiconductors. We show that there is some degree of consensus among dispersion-corrected exchange-correlation functionals regarding the energetic orderings of polytypes, but we find that for each material there are multiple stacking orders with relative energies of less than 1 meV per monolayer unit cell, implying that stacking faults are expected to be abundant in all post transition metal chalcogenides. By fitting a simple model to all our energy data, we predict that the most stable hexagonal structure has the P63/mmc space group in each case but that the stacking order differs between GaS, GaSe, GaTe, and InS, on the one hand, and InSe and InTe, on the other. At zero pressure, the relative energies obtained with different functionals disagree by around 1–5 meV per monolayer unit cell, which is not sufficient to identify the most stable structure unambiguously; however, multigigapascal pressures reduce the number of competing phases significantly. At higher pressures, an AB′-stacked structure of the most stable monolayer polytype is found to be the most stable bulk structure.

U2 - 10.1103/PhysRevB.103.094118

DO - 10.1103/PhysRevB.103.094118

M3 - Journal article

VL - 103

JO - Physical Review B: Condensed Matter and Materials Physics

JF - Physical Review B: Condensed Matter and Materials Physics

SN - 1098-0121

IS - 9

M1 - 094118

ER -