Home > Research > Publications & Outputs > Superstructure of self-aligned hexagonal GaN na...
View graph of relations

Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si(111) surface

Research output: Contribution to journalJournal articlepeer-review

Published

Standard

Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si(111) surface. / Kumar, P.; Tuteja, M.; Kesaria, Manoj; Waghmare, U.V.; Shivaprasad, S. M.

In: Applied Physics Letters, Vol. 101, No. 13, 24.09.2012, p. 131605-131608.

Research output: Contribution to journalJournal articlepeer-review

Harvard

Kumar, P, Tuteja, M, Kesaria, M, Waghmare, UV & Shivaprasad, SM 2012, 'Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si(111) surface', Applied Physics Letters, vol. 101, no. 13, pp. 131605-131608. https://doi.org/10.1063/1.4751986

APA

Kumar, P., Tuteja, M., Kesaria, M., Waghmare, U. V., & Shivaprasad, S. M. (2012). Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si(111) surface. Applied Physics Letters, 101(13), 131605-131608. https://doi.org/10.1063/1.4751986

Vancouver

Kumar P, Tuteja M, Kesaria M, Waghmare UV, Shivaprasad SM. Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si(111) surface. Applied Physics Letters. 2012 Sep 24;101(13):131605-131608. https://doi.org/10.1063/1.4751986

Author

Kumar, P. ; Tuteja, M. ; Kesaria, Manoj ; Waghmare, U.V. ; Shivaprasad, S. M. / Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si(111) surface. In: Applied Physics Letters. 2012 ; Vol. 101, No. 13. pp. 131605-131608.

Bibtex

@article{020e5e010de14c339411e595a357c8e6,
title = "Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si(111) surface",
abstract = "We present here the spontaneous formation of catalyst-free, self-aligned crystalline (wurtzite) nanorods on Si(111) surfaces modified by surface nitridation. Nanorods grown by molecular beam epitaxy on bare Si(111) and non-stoichiometric silicon nitride interface are found to be single crystalline but disoriented. Those grown on single crystalline Si3N4 intermediate layer are highly dense c-oriented hexagonal shaped nanorods. The morphology and the self-assembly of the nanorods shows an ordered epitaxial hexagonal superstructure, suggesting that they are nucleated at screw dislocations at the interface and grow spirally in the c-direction. The aligned nanorod assembly shows high-quality structural and optical emission properties.",
author = "P. Kumar and M. Tuteja and Manoj Kesaria and U.V. Waghmare and Shivaprasad, {S. M.}",
year = "2012",
month = sep,
day = "24",
doi = "10.1063/1.4751986",
language = "English",
volume = "101",
pages = "131605--131608",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "13",

}

RIS

TY - JOUR

T1 - Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si(111) surface

AU - Kumar, P.

AU - Tuteja, M.

AU - Kesaria, Manoj

AU - Waghmare, U.V.

AU - Shivaprasad, S. M.

PY - 2012/9/24

Y1 - 2012/9/24

N2 - We present here the spontaneous formation of catalyst-free, self-aligned crystalline (wurtzite) nanorods on Si(111) surfaces modified by surface nitridation. Nanorods grown by molecular beam epitaxy on bare Si(111) and non-stoichiometric silicon nitride interface are found to be single crystalline but disoriented. Those grown on single crystalline Si3N4 intermediate layer are highly dense c-oriented hexagonal shaped nanorods. The morphology and the self-assembly of the nanorods shows an ordered epitaxial hexagonal superstructure, suggesting that they are nucleated at screw dislocations at the interface and grow spirally in the c-direction. The aligned nanorod assembly shows high-quality structural and optical emission properties.

AB - We present here the spontaneous formation of catalyst-free, self-aligned crystalline (wurtzite) nanorods on Si(111) surfaces modified by surface nitridation. Nanorods grown by molecular beam epitaxy on bare Si(111) and non-stoichiometric silicon nitride interface are found to be single crystalline but disoriented. Those grown on single crystalline Si3N4 intermediate layer are highly dense c-oriented hexagonal shaped nanorods. The morphology and the self-assembly of the nanorods shows an ordered epitaxial hexagonal superstructure, suggesting that they are nucleated at screw dislocations at the interface and grow spirally in the c-direction. The aligned nanorod assembly shows high-quality structural and optical emission properties.

U2 - 10.1063/1.4751986

DO - 10.1063/1.4751986

M3 - Journal article

VL - 101

SP - 131605

EP - 131608

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13

ER -