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  • Zhu+et+al_2022_Chinese_Phys._B_10.1088_1674-1056_ac657d

    Rights statement: This is an author-created, un-copyedited version of an article published in Chinese Physics B. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at doi: 10.1088/1674-1056/ac657d

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Synthesis of hexagonal boron nitride films by dual temperature zone low-pressure chemical vapor deposition

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Synthesis of hexagonal boron nitride films by dual temperature zone low-pressure chemical vapor deposition. / Zhu, Zhifu ; Wang, Shaotang; Zou, Jijun et al.
In: Chinese Physics B, Vol. 31, No. 8, 086103, 31.08.2022.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Zhu, Z, Wang, S, Zou, J, Huang, H, Sun, Z, Xiu, Q, Zhang, Z, Yue, X, Zhang, Y, Qu, J & Gan, Y 2022, 'Synthesis of hexagonal boron nitride films by dual temperature zone low-pressure chemical vapor deposition', Chinese Physics B, vol. 31, no. 8, 086103. https://doi.org/10.1088/1674-1056/ac657d

APA

Zhu, Z., Wang, S., Zou, J., Huang, H., Sun, Z., Xiu, Q., Zhang, Z., Yue, X., Zhang, Y., Qu, J., & Gan, Y. (2022). Synthesis of hexagonal boron nitride films by dual temperature zone low-pressure chemical vapor deposition. Chinese Physics B, 31(8), Article 086103. https://doi.org/10.1088/1674-1056/ac657d

Vancouver

Zhu Z, Wang S, Zou J, Huang H, Sun Z, Xiu Q et al. Synthesis of hexagonal boron nitride films by dual temperature zone low-pressure chemical vapor deposition. Chinese Physics B. 2022 Aug 31;31(8):086103. doi: 10.1088/1674-1056/ac657d

Author

Zhu, Zhifu ; Wang, Shaotang ; Zou, Jijun et al. / Synthesis of hexagonal boron nitride films by dual temperature zone low-pressure chemical vapor deposition. In: Chinese Physics B. 2022 ; Vol. 31, No. 8.

Bibtex

@article{7af8e484a19648dbba144f59f7cb26eb,
title = "Synthesis of hexagonal boron nitride films by dual temperature zone low-pressure chemical vapor deposition",
abstract = "Hexagonal boron nitride (h-BN) films are synthesized by dual temperature zone low-pressure chemical vapor deposition (LPCVD) through using a single ammonia borane precursor on non-catalytic c-plane Al2O3 substrates. The grown films are confirmed to be h-BN films by various characterization methods. Meanwhile, the growth rates and crystal quality of h-BN films at different positions in the dual temperature zone are studied. It is found that the growth rates and crystal quality of the h-BN films at different positions on the substrate are significantly different. The growth rates of the h-BN thin films show their decreasing trends with the rearward position, while the crystal quality is improved. This work provides an experimental basis for the preparation of large area wafer thick h-BN films by LPCVD.",
author = "Zhifu Zhu and Shaotang Wang and Jijun Zou and He Huang and Zhijia Sun and Qinglei Xiu and Zhongming Zhang and Xiuping Yue and Yang Zhang and Jinhui Qu and Yong Gan",
note = "This is an author-created, un-copyedited version of an article published in Chinese Physics B. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at doi: 10.1088/1674-1056/ac657d",
year = "2022",
month = aug,
day = "31",
doi = "10.1088/1674-1056/ac657d",
language = "English",
volume = "31",
journal = "Chinese Physics B",
issn = "1674-1056",
publisher = "IOP Publishing Ltd.",
number = "8",

}

RIS

TY - JOUR

T1 - Synthesis of hexagonal boron nitride films by dual temperature zone low-pressure chemical vapor deposition

AU - Zhu, Zhifu

AU - Wang, Shaotang

AU - Zou, Jijun

AU - Huang, He

AU - Sun, Zhijia

AU - Xiu, Qinglei

AU - Zhang, Zhongming

AU - Yue, Xiuping

AU - Zhang, Yang

AU - Qu, Jinhui

AU - Gan, Yong

N1 - This is an author-created, un-copyedited version of an article published in Chinese Physics B. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at doi: 10.1088/1674-1056/ac657d

PY - 2022/8/31

Y1 - 2022/8/31

N2 - Hexagonal boron nitride (h-BN) films are synthesized by dual temperature zone low-pressure chemical vapor deposition (LPCVD) through using a single ammonia borane precursor on non-catalytic c-plane Al2O3 substrates. The grown films are confirmed to be h-BN films by various characterization methods. Meanwhile, the growth rates and crystal quality of h-BN films at different positions in the dual temperature zone are studied. It is found that the growth rates and crystal quality of the h-BN films at different positions on the substrate are significantly different. The growth rates of the h-BN thin films show their decreasing trends with the rearward position, while the crystal quality is improved. This work provides an experimental basis for the preparation of large area wafer thick h-BN films by LPCVD.

AB - Hexagonal boron nitride (h-BN) films are synthesized by dual temperature zone low-pressure chemical vapor deposition (LPCVD) through using a single ammonia borane precursor on non-catalytic c-plane Al2O3 substrates. The grown films are confirmed to be h-BN films by various characterization methods. Meanwhile, the growth rates and crystal quality of h-BN films at different positions in the dual temperature zone are studied. It is found that the growth rates and crystal quality of the h-BN films at different positions on the substrate are significantly different. The growth rates of the h-BN thin films show their decreasing trends with the rearward position, while the crystal quality is improved. This work provides an experimental basis for the preparation of large area wafer thick h-BN films by LPCVD.

U2 - 10.1088/1674-1056/ac657d

DO - 10.1088/1674-1056/ac657d

M3 - Journal article

VL - 31

JO - Chinese Physics B

JF - Chinese Physics B

SN - 1674-1056

IS - 8

M1 - 086103

ER -