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The ATLASPix3.1 CMOS pixel sensor testbeam performance and serial powering characterisation

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  • F. Ustuner
  • R. Zanzottera
  • A. Andreazza
  • R. Dong
  • H. Fox
  • Y. Gao
  • P. Gheewalla
  • B. Masic
  • L. Meng
  • I. Peric
  • F. Sabatini
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Article numberC02036
<mark>Journal publication date</mark>28/02/2025
<mark>Journal</mark>Journal of Instrumentation
Issue number02
Volume20
Publication StatusPublished
Early online date18/02/25
<mark>Original language</mark>English

Abstract

High-voltage CMOS (HV-CMOS) pixel technology is being considered for future Higgs factory experiments. The ATLASPix3.1 chip, with a pitch of 50 μm × 150 μm, fabricated using TSI 180 nm HV-CMOS technology, is a full reticle-size monolithic HV-CMOS sensor with shunt-low dropout (LDO) regulators that allow serial powering for multiple sensors. A beam test was conducted at DESY using 3–6 GeV electron beams, with chips operated in triggerless readout mode with zero suppression, demonstrating multi-chip capability. This was further evaluated with hadron beams, both with and without the built-in power regulators. This study presents the electrical characterisations of the shunt-LDO regulators for serial powering and test beam results of ATLASPix3.1 sensors.