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The ATLASPix3.1 CMOS pixel sensor testbeam performance and serial powering characterisation

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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The ATLASPix3.1 CMOS pixel sensor testbeam performance and serial powering characterisation. / Ustuner, F.; Zanzottera, R.; Andreazza, A. et al.
In: Journal of Instrumentation, Vol. 20, No. 02, C02036, 28.02.2025.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Ustuner, F, Zanzottera, R, Andreazza, A, Dong, R, Fox, H, Gao, Y, Gheewalla, P, Masic, B, Meng, L, Peric, I & Sabatini, F 2025, 'The ATLASPix3.1 CMOS pixel sensor testbeam performance and serial powering characterisation', Journal of Instrumentation, vol. 20, no. 02, C02036. https://doi.org/10.1088/1748-0221/20/02/c02036

APA

Ustuner, F., Zanzottera, R., Andreazza, A., Dong, R., Fox, H., Gao, Y., Gheewalla, P., Masic, B., Meng, L., Peric, I., & Sabatini, F. (2025). The ATLASPix3.1 CMOS pixel sensor testbeam performance and serial powering characterisation. Journal of Instrumentation, 20(02), Article C02036. https://doi.org/10.1088/1748-0221/20/02/c02036

Vancouver

Ustuner F, Zanzottera R, Andreazza A, Dong R, Fox H, Gao Y et al. The ATLASPix3.1 CMOS pixel sensor testbeam performance and serial powering characterisation. Journal of Instrumentation. 2025 Feb 28;20(02):C02036. Epub 2025 Feb 18. doi: 10.1088/1748-0221/20/02/c02036

Author

Ustuner, F. ; Zanzottera, R. ; Andreazza, A. et al. / The ATLASPix3.1 CMOS pixel sensor testbeam performance and serial powering characterisation. In: Journal of Instrumentation. 2025 ; Vol. 20, No. 02.

Bibtex

@article{c626588af6d0402a88be7ca3cdd59cf4,
title = "The ATLASPix3.1 CMOS pixel sensor testbeam performance and serial powering characterisation",
abstract = "High-voltage CMOS (HV-CMOS) pixel technology is being considered for future Higgs factory experiments. The ATLASPix3.1 chip, with a pitch of 50 μm × 150 μm, fabricated using TSI 180 nm HV-CMOS technology, is a full reticle-size monolithic HV-CMOS sensor with shunt-low dropout (LDO) regulators that allow serial powering for multiple sensors. A beam test was conducted at DESY using 3–6 GeV electron beams, with chips operated in triggerless readout mode with zero suppression, demonstrating multi-chip capability. This was further evaluated with hadron beams, both with and without the built-in power regulators. This study presents the electrical characterisations of the shunt-LDO regulators for serial powering and test beam results of ATLASPix3.1 sensors.",
keywords = "Data acquisition circuits, Detector control systems (detector and experiment monitoring and slow-control systems, architecture, hardware, algorithms, databases), Electronic detector readout concepts (solid-state)",
author = "F. Ustuner and R. Zanzottera and A. Andreazza and R. Dong and H. Fox and Y. Gao and P. Gheewalla and B. Masic and L. Meng and I. Peric and F. Sabatini",
year = "2025",
month = feb,
day = "28",
doi = "10.1088/1748-0221/20/02/c02036",
language = "English",
volume = "20",
journal = "Journal of Instrumentation",
issn = "1748-0221",
publisher = "Institute of Physics Publishing",
number = "02",

}

RIS

TY - JOUR

T1 - The ATLASPix3.1 CMOS pixel sensor testbeam performance and serial powering characterisation

AU - Ustuner, F.

AU - Zanzottera, R.

AU - Andreazza, A.

AU - Dong, R.

AU - Fox, H.

AU - Gao, Y.

AU - Gheewalla, P.

AU - Masic, B.

AU - Meng, L.

AU - Peric, I.

AU - Sabatini, F.

PY - 2025/2/28

Y1 - 2025/2/28

N2 - High-voltage CMOS (HV-CMOS) pixel technology is being considered for future Higgs factory experiments. The ATLASPix3.1 chip, with a pitch of 50 μm × 150 μm, fabricated using TSI 180 nm HV-CMOS technology, is a full reticle-size monolithic HV-CMOS sensor with shunt-low dropout (LDO) regulators that allow serial powering for multiple sensors. A beam test was conducted at DESY using 3–6 GeV electron beams, with chips operated in triggerless readout mode with zero suppression, demonstrating multi-chip capability. This was further evaluated with hadron beams, both with and without the built-in power regulators. This study presents the electrical characterisations of the shunt-LDO regulators for serial powering and test beam results of ATLASPix3.1 sensors.

AB - High-voltage CMOS (HV-CMOS) pixel technology is being considered for future Higgs factory experiments. The ATLASPix3.1 chip, with a pitch of 50 μm × 150 μm, fabricated using TSI 180 nm HV-CMOS technology, is a full reticle-size monolithic HV-CMOS sensor with shunt-low dropout (LDO) regulators that allow serial powering for multiple sensors. A beam test was conducted at DESY using 3–6 GeV electron beams, with chips operated in triggerless readout mode with zero suppression, demonstrating multi-chip capability. This was further evaluated with hadron beams, both with and without the built-in power regulators. This study presents the electrical characterisations of the shunt-LDO regulators for serial powering and test beam results of ATLASPix3.1 sensors.

KW - Data acquisition circuits

KW - Detector control systems (detector and experiment monitoring and slow-control systems, architecture, hardware, algorithms, databases)

KW - Electronic detector readout concepts (solid-state)

U2 - 10.1088/1748-0221/20/02/c02036

DO - 10.1088/1748-0221/20/02/c02036

M3 - Journal article

VL - 20

JO - Journal of Instrumentation

JF - Journal of Instrumentation

SN - 1748-0221

IS - 02

M1 - C02036

ER -