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Theory, Design, and Characterization of Nanoelectromechanical Relays for Stiction-Based Non-Volatile Memory

Research output: Contribution to Journal/MagazineJournal articlepeer-review

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Theory, Design, and Characterization of Nanoelectromechanical Relays for Stiction-Based Non-Volatile Memory. / Pamunuwa, D.; Worsey, E.; Reynolds, J.D.; Seward, D.; Chong, H.M.H.; Rana, S.

In: Journal of Micromechanical Systems, Vol. 31, No. 2, 30.04.2022, p. 283-291.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Pamunuwa, D, Worsey, E, Reynolds, JD, Seward, D, Chong, HMH & Rana, S 2022, 'Theory, Design, and Characterization of Nanoelectromechanical Relays for Stiction-Based Non-Volatile Memory', Journal of Micromechanical Systems, vol. 31, no. 2, pp. 283-291. https://doi.org/10.1109/JMEMS.2021.3138022

APA

Pamunuwa, D., Worsey, E., Reynolds, J. D., Seward, D., Chong, H. M. H., & Rana, S. (2022). Theory, Design, and Characterization of Nanoelectromechanical Relays for Stiction-Based Non-Volatile Memory. Journal of Micromechanical Systems, 31(2), 283-291. https://doi.org/10.1109/JMEMS.2021.3138022

Vancouver

Pamunuwa D, Worsey E, Reynolds JD, Seward D, Chong HMH, Rana S. Theory, Design, and Characterization of Nanoelectromechanical Relays for Stiction-Based Non-Volatile Memory. Journal of Micromechanical Systems. 2022 Apr 30;31(2):283-291. https://doi.org/10.1109/JMEMS.2021.3138022

Author

Pamunuwa, D. ; Worsey, E. ; Reynolds, J.D. ; Seward, D. ; Chong, H.M.H. ; Rana, S. / Theory, Design, and Characterization of Nanoelectromechanical Relays for Stiction-Based Non-Volatile Memory. In: Journal of Micromechanical Systems. 2022 ; Vol. 31, No. 2. pp. 283-291.

Bibtex

@article{2b0853208a234e1f9679ed50455f0654,
title = "Theory, Design, and Characterization of Nanoelectromechanical Relays for Stiction-Based Non-Volatile Memory",
abstract = "Diverse areas such as the Internet of Things (IoT), aerospace and industrial electronics increasingly require non-volatile memory to work under high-temperature, radiation-hard conditions, with zero standby power. Nanoelectromechanical (NEM) relays uniquely have the potential to work at 300°C and absorb high levels of radiation, with zero leakage current across the entire operational range. While NEM relays that utilise stiction for non-volatile operation have been demonstrated, it is not clear how to design a relay to reliably achieve given programming and reprogramming voltages, an essential requirement in producing a memory. Here, we develop an analytical, first-principle physics-based model of rotational NEM relays to provide detailed understanding of how the programming and reprogramming voltages vary based on the device dimensions and surface adhesion force. We then carry out an experimental parametric study of relays with a critical dimension of ≈80 nm to characterise the surface adhesion force, and derive guidelines for how a NEM relay should be dimensioned for a given contact surface force, feature size constraints and operating requirements. We carry out a scaling study to show that voltages of ≈1 V and a footprint under ≈2 μm² can be achieved with a critical dimension of ≈10 nm, with this device architecture. [2021-0138] IEEE",
keywords = "Bending, Fasteners, Force, high-temperature., Logic gates, microelectromechanical devices, Nanoelectromechanical (NEM) systems, Nanoelectromechanical systems, nanofabrication, Nonvolatile memory, nonvolatile memory, Relays, Adhesion, Internet of things, Nanotechnology, Stiction, High-temperature., Highest temperature, Nano-electromechanical, Non-volatile memory, Relay, Nonvolatile storage",
author = "D. Pamunuwa and E. Worsey and J.D. Reynolds and D. Seward and H.M.H. Chong and S. Rana",
note = "{\textcopyright}2022 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. ",
year = "2022",
month = apr,
day = "30",
doi = "10.1109/JMEMS.2021.3138022",
language = "English",
volume = "31",
pages = "283--291",
journal = "Journal of Micromechanical Systems",
issn = "1057-7157",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",

}

RIS

TY - JOUR

T1 - Theory, Design, and Characterization of Nanoelectromechanical Relays for Stiction-Based Non-Volatile Memory

AU - Pamunuwa, D.

AU - Worsey, E.

AU - Reynolds, J.D.

AU - Seward, D.

AU - Chong, H.M.H.

AU - Rana, S.

N1 - ©2022 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

PY - 2022/4/30

Y1 - 2022/4/30

N2 - Diverse areas such as the Internet of Things (IoT), aerospace and industrial electronics increasingly require non-volatile memory to work under high-temperature, radiation-hard conditions, with zero standby power. Nanoelectromechanical (NEM) relays uniquely have the potential to work at 300°C and absorb high levels of radiation, with zero leakage current across the entire operational range. While NEM relays that utilise stiction for non-volatile operation have been demonstrated, it is not clear how to design a relay to reliably achieve given programming and reprogramming voltages, an essential requirement in producing a memory. Here, we develop an analytical, first-principle physics-based model of rotational NEM relays to provide detailed understanding of how the programming and reprogramming voltages vary based on the device dimensions and surface adhesion force. We then carry out an experimental parametric study of relays with a critical dimension of ≈80 nm to characterise the surface adhesion force, and derive guidelines for how a NEM relay should be dimensioned for a given contact surface force, feature size constraints and operating requirements. We carry out a scaling study to show that voltages of ≈1 V and a footprint under ≈2 μm² can be achieved with a critical dimension of ≈10 nm, with this device architecture. [2021-0138] IEEE

AB - Diverse areas such as the Internet of Things (IoT), aerospace and industrial electronics increasingly require non-volatile memory to work under high-temperature, radiation-hard conditions, with zero standby power. Nanoelectromechanical (NEM) relays uniquely have the potential to work at 300°C and absorb high levels of radiation, with zero leakage current across the entire operational range. While NEM relays that utilise stiction for non-volatile operation have been demonstrated, it is not clear how to design a relay to reliably achieve given programming and reprogramming voltages, an essential requirement in producing a memory. Here, we develop an analytical, first-principle physics-based model of rotational NEM relays to provide detailed understanding of how the programming and reprogramming voltages vary based on the device dimensions and surface adhesion force. We then carry out an experimental parametric study of relays with a critical dimension of ≈80 nm to characterise the surface adhesion force, and derive guidelines for how a NEM relay should be dimensioned for a given contact surface force, feature size constraints and operating requirements. We carry out a scaling study to show that voltages of ≈1 V and a footprint under ≈2 μm² can be achieved with a critical dimension of ≈10 nm, with this device architecture. [2021-0138] IEEE

KW - Bending

KW - Fasteners

KW - Force

KW - high-temperature.

KW - Logic gates

KW - microelectromechanical devices

KW - Nanoelectromechanical (NEM) systems

KW - Nanoelectromechanical systems

KW - nanofabrication

KW - Nonvolatile memory

KW - nonvolatile memory

KW - Relays

KW - Adhesion

KW - Internet of things

KW - Nanotechnology

KW - Stiction

KW - High-temperature.

KW - Highest temperature

KW - Nano-electromechanical

KW - Non-volatile memory

KW - Relay

KW - Nonvolatile storage

U2 - 10.1109/JMEMS.2021.3138022

DO - 10.1109/JMEMS.2021.3138022

M3 - Journal article

VL - 31

SP - 283

EP - 291

JO - Journal of Micromechanical Systems

JF - Journal of Micromechanical Systems

SN - 1057-7157

IS - 2

ER -