Final published version
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
}
TY - JOUR
T1 - Thermal conductivity measurement of suspended Si-N membranes from 10 K to 275 K using the 3ω-Völklein method
AU - Ftouni, Hossein
AU - Blanc, Christophe
AU - Sikora, A.
AU - Richard, J.
AU - Defoort, M.
AU - Lulla , Kunal
AU - Collin, Eddy
AU - Bourgeois, Olivier
PY - 2012
Y1 - 2012
N2 - The thermal properties of suspended thin films prepared by the micro-machining process have been measured using the 3ω dynamic method coupled to a Völklein geometry. A transducer (heater/thermometer) centered on the membrane is driven by an ac current causing periodic thermal oscillations. The measurement of the temperature oscillation on the membrane is made at the third harmonic using a Wheatstone bridge set up. Here by coupling the 3ω method to a Völklein geometry (suspended membrane) we obtained a highly sensitive technique to measure the thermal conductance with a resolution of (ΔK/K = 10−3) and a sensitivity of the order of nanoWatt/K, thanks to a very sensitive niobium nitride thermometry. This method is applied to measure the in-plane thermal conductivity of 100 nm silicon nitride membrane, in the temperature range of 10–275 K.
AB - The thermal properties of suspended thin films prepared by the micro-machining process have been measured using the 3ω dynamic method coupled to a Völklein geometry. A transducer (heater/thermometer) centered on the membrane is driven by an ac current causing periodic thermal oscillations. The measurement of the temperature oscillation on the membrane is made at the third harmonic using a Wheatstone bridge set up. Here by coupling the 3ω method to a Völklein geometry (suspended membrane) we obtained a highly sensitive technique to measure the thermal conductance with a resolution of (ΔK/K = 10−3) and a sensitivity of the order of nanoWatt/K, thanks to a very sensitive niobium nitride thermometry. This method is applied to measure the in-plane thermal conductivity of 100 nm silicon nitride membrane, in the temperature range of 10–275 K.
U2 - 10.1088/1742-6596/395/1/012109
DO - 10.1088/1742-6596/395/1/012109
M3 - Journal article
VL - 395
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
M1 - 012109
ER -