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Thermal conductivity of silicon nitride membranes is not sensitive to stress

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Thermal conductivity of silicon nitride membranes is not sensitive to stress. / Ftouni, Hossein; Blanc, Christophe; Tainoff, Dimitri et al.
In: Physical review B, Vol. 92, No. 12, 125439, 15.09.2015.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Ftouni, H, Blanc, C, Tainoff, D, Fefferman, AD, Defoort, M, Lulla, KJ, Richard, J, Collin, E & Bourgeois, O 2015, 'Thermal conductivity of silicon nitride membranes is not sensitive to stress', Physical review B, vol. 92, no. 12, 125439. https://doi.org/10.1103/PhysRevB.92.125439

APA

Ftouni, H., Blanc, C., Tainoff, D., Fefferman, A. D., Defoort, M., Lulla, K. J., Richard, J., Collin, E., & Bourgeois, O. (2015). Thermal conductivity of silicon nitride membranes is not sensitive to stress. Physical review B, 92(12), Article 125439. https://doi.org/10.1103/PhysRevB.92.125439

Vancouver

Ftouni H, Blanc C, Tainoff D, Fefferman AD, Defoort M, Lulla KJ et al. Thermal conductivity of silicon nitride membranes is not sensitive to stress. Physical review B. 2015 Sept 15;92(12):125439. doi: 10.1103/PhysRevB.92.125439

Author

Ftouni, Hossein ; Blanc, Christophe ; Tainoff, Dimitri et al. / Thermal conductivity of silicon nitride membranes is not sensitive to stress. In: Physical review B. 2015 ; Vol. 92, No. 12.

Bibtex

@article{88a8eb2e6a554cfe81d94d9f6e949e3d,
title = "Thermal conductivity of silicon nitride membranes is not sensitive to stress",
abstract = "We have measured the thermal properties of suspended membranes from 10 to 300 K for two amplitudes of internal stress (about 0.1 and 1 GPa) and for two different thicknesses (50 and 100 nm). The use of the original 3ω-Volklein method has allowed the extraction of both the specific heat and the thermal conductivity of each SiN membrane over a wide temperature range. The mechanical properties of the same substrates have been measured at helium temperatures using nanomechanical techniques. Our measurements show that the thermal transport in freestanding SiN membranes is not affected by the presence of internal stress. Consistently, mechanical dissipation is also unaffected even though Q's increase with increasing tensile stress. We thus demonstrate that the theory developed by Wu and Yu [J. Wu and C. C. Yu, Phys. Rev. B 84, 174109 (2011)PRBMDO1098-012110.1103/PhysRevB.84.174109] does not apply to this amorphous material in this stress range. On the other hand, our results can be viewed as a natural consequence of the {"}dissipation dilution{"} argument [Y. L. Huang and P. R. Saulson, Rev. Sci. Instrum. 69, 544 (1998)RSINAK0034-674810.1063/1.1148692], which has been introduced in the context of mechanical damping.",
author = "Hossein Ftouni and Christophe Blanc and Dimitri Tainoff and Fefferman, {Andrew D.} and Martial Defoort and Lulla, {Kunal J.} and Jacques Richard and Eddy Collin and Olivier Bourgeois",
year = "2015",
month = sep,
day = "15",
doi = "10.1103/PhysRevB.92.125439",
language = "English",
volume = "92",
journal = "Physical review B",
issn = "1098-0121",
publisher = "AMER PHYSICAL SOC",
number = "12",

}

RIS

TY - JOUR

T1 - Thermal conductivity of silicon nitride membranes is not sensitive to stress

AU - Ftouni, Hossein

AU - Blanc, Christophe

AU - Tainoff, Dimitri

AU - Fefferman, Andrew D.

AU - Defoort, Martial

AU - Lulla, Kunal J.

AU - Richard, Jacques

AU - Collin, Eddy

AU - Bourgeois, Olivier

PY - 2015/9/15

Y1 - 2015/9/15

N2 - We have measured the thermal properties of suspended membranes from 10 to 300 K for two amplitudes of internal stress (about 0.1 and 1 GPa) and for two different thicknesses (50 and 100 nm). The use of the original 3ω-Volklein method has allowed the extraction of both the specific heat and the thermal conductivity of each SiN membrane over a wide temperature range. The mechanical properties of the same substrates have been measured at helium temperatures using nanomechanical techniques. Our measurements show that the thermal transport in freestanding SiN membranes is not affected by the presence of internal stress. Consistently, mechanical dissipation is also unaffected even though Q's increase with increasing tensile stress. We thus demonstrate that the theory developed by Wu and Yu [J. Wu and C. C. Yu, Phys. Rev. B 84, 174109 (2011)PRBMDO1098-012110.1103/PhysRevB.84.174109] does not apply to this amorphous material in this stress range. On the other hand, our results can be viewed as a natural consequence of the "dissipation dilution" argument [Y. L. Huang and P. R. Saulson, Rev. Sci. Instrum. 69, 544 (1998)RSINAK0034-674810.1063/1.1148692], which has been introduced in the context of mechanical damping.

AB - We have measured the thermal properties of suspended membranes from 10 to 300 K for two amplitudes of internal stress (about 0.1 and 1 GPa) and for two different thicknesses (50 and 100 nm). The use of the original 3ω-Volklein method has allowed the extraction of both the specific heat and the thermal conductivity of each SiN membrane over a wide temperature range. The mechanical properties of the same substrates have been measured at helium temperatures using nanomechanical techniques. Our measurements show that the thermal transport in freestanding SiN membranes is not affected by the presence of internal stress. Consistently, mechanical dissipation is also unaffected even though Q's increase with increasing tensile stress. We thus demonstrate that the theory developed by Wu and Yu [J. Wu and C. C. Yu, Phys. Rev. B 84, 174109 (2011)PRBMDO1098-012110.1103/PhysRevB.84.174109] does not apply to this amorphous material in this stress range. On the other hand, our results can be viewed as a natural consequence of the "dissipation dilution" argument [Y. L. Huang and P. R. Saulson, Rev. Sci. Instrum. 69, 544 (1998)RSINAK0034-674810.1063/1.1148692], which has been introduced in the context of mechanical damping.

U2 - 10.1103/PhysRevB.92.125439

DO - 10.1103/PhysRevB.92.125439

M3 - Journal article

AN - SCOPUS:84944081238

VL - 92

JO - Physical review B

JF - Physical review B

SN - 1098-0121

IS - 12

M1 - 125439

ER -