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  • PhysRevLett.114.107401

    Rights statement: © 2015 American Physical Society

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Three-particle complexes in two-dimensional semiconductors

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Three-particle complexes in two-dimensional semiconductors. / Ganchev, Bogdan; Drummond, Neil; Aleiner, Igor et al.
In: Physical review letters, Vol. 114, No. 10, 107401, 13.03.2015.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Ganchev, B, Drummond, N, Aleiner, I & Falko, V 2015, 'Three-particle complexes in two-dimensional semiconductors', Physical review letters, vol. 114, no. 10, 107401. https://doi.org/10.1103/PhysRevLett.114.107401

APA

Ganchev, B., Drummond, N., Aleiner, I., & Falko, V. (2015). Three-particle complexes in two-dimensional semiconductors. Physical review letters, 114(10), Article 107401. https://doi.org/10.1103/PhysRevLett.114.107401

Vancouver

Ganchev B, Drummond N, Aleiner I, Falko V. Three-particle complexes in two-dimensional semiconductors. Physical review letters. 2015 Mar 13;114(10):107401. doi: 10.1103/PhysRevLett.114.107401

Author

Ganchev, Bogdan ; Drummond, Neil ; Aleiner, Igor et al. / Three-particle complexes in two-dimensional semiconductors. In: Physical review letters. 2015 ; Vol. 114, No. 10.

Bibtex

@article{88d01ed88b4e490dbdd786cd2b1ef6f0,
title = "Three-particle complexes in two-dimensional semiconductors",
abstract = "We evaluate binding energies of trions X^{±}, excitons bound by a donor or acceptor charge X^{D(A)}, and overcharged acceptors or donors in two-dimensional atomic crystals by mapping the three-body problem in two dimensions onto one particle in a three-dimensional potential treatable by a purposely developed boundary-matching-matrix method. We find that in monolayers of transition metal dichalcogenides the dissociation energy of X^{±} is typically much larger than that of localized exciton complexes, so that trions are more resilient to heating, despite the fact that their recombination line in optics is less redshifted from the exciton line than the line of X^{D(A)}.",
author = "Bogdan Ganchev and Neil Drummond and Igor Aleiner and Vladimir Falko",
note = "{\textcopyright} 2015 American Physical Society",
year = "2015",
month = mar,
day = "13",
doi = "10.1103/PhysRevLett.114.107401",
language = "English",
volume = "114",
journal = "Physical review letters",
issn = "1079-7114",
publisher = "American Physical Society",
number = "10",

}

RIS

TY - JOUR

T1 - Three-particle complexes in two-dimensional semiconductors

AU - Ganchev, Bogdan

AU - Drummond, Neil

AU - Aleiner, Igor

AU - Falko, Vladimir

N1 - © 2015 American Physical Society

PY - 2015/3/13

Y1 - 2015/3/13

N2 - We evaluate binding energies of trions X^{±}, excitons bound by a donor or acceptor charge X^{D(A)}, and overcharged acceptors or donors in two-dimensional atomic crystals by mapping the three-body problem in two dimensions onto one particle in a three-dimensional potential treatable by a purposely developed boundary-matching-matrix method. We find that in monolayers of transition metal dichalcogenides the dissociation energy of X^{±} is typically much larger than that of localized exciton complexes, so that trions are more resilient to heating, despite the fact that their recombination line in optics is less redshifted from the exciton line than the line of X^{D(A)}.

AB - We evaluate binding energies of trions X^{±}, excitons bound by a donor or acceptor charge X^{D(A)}, and overcharged acceptors or donors in two-dimensional atomic crystals by mapping the three-body problem in two dimensions onto one particle in a three-dimensional potential treatable by a purposely developed boundary-matching-matrix method. We find that in monolayers of transition metal dichalcogenides the dissociation energy of X^{±} is typically much larger than that of localized exciton complexes, so that trions are more resilient to heating, despite the fact that their recombination line in optics is less redshifted from the exciton line than the line of X^{D(A)}.

U2 - 10.1103/PhysRevLett.114.107401

DO - 10.1103/PhysRevLett.114.107401

M3 - Journal article

C2 - 25815964

VL - 114

JO - Physical review letters

JF - Physical review letters

SN - 1079-7114

IS - 10

M1 - 107401

ER -