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Transformation of c-oriented nanowall network to a flat morphology in GaN films on c-plane sapphire

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Transformation of c-oriented nanowall network to a flat morphology in GaN films on c-plane sapphire. / Kesaria, Manoj; Shetty, Satish; Cohen, P.I. et al.
In: Materials Research Bulletin, Vol. 46, No. 11, 11.2011, p. 1811-1813.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Kesaria, M, Shetty, S, Cohen, PI & Shivaprasad, SM 2011, 'Transformation of c-oriented nanowall network to a flat morphology in GaN films on c-plane sapphire', Materials Research Bulletin, vol. 46, no. 11, pp. 1811-1813. https://doi.org/10.1016/j.materresbull.2011.07.043

APA

Kesaria, M., Shetty, S., Cohen, P. I., & Shivaprasad, S. M. (2011). Transformation of c-oriented nanowall network to a flat morphology in GaN films on c-plane sapphire. Materials Research Bulletin, 46(11), 1811-1813. https://doi.org/10.1016/j.materresbull.2011.07.043

Vancouver

Kesaria M, Shetty S, Cohen PI, Shivaprasad SM. Transformation of c-oriented nanowall network to a flat morphology in GaN films on c-plane sapphire. Materials Research Bulletin. 2011 Nov;46(11):1811-1813. doi: 10.1016/j.materresbull.2011.07.043

Author

Kesaria, Manoj ; Shetty, Satish ; Cohen, P.I. et al. / Transformation of c-oriented nanowall network to a flat morphology in GaN films on c-plane sapphire. In: Materials Research Bulletin. 2011 ; Vol. 46, No. 11. pp. 1811-1813.

Bibtex

@article{4623ef6234b345858adaa4803ec69b1b,
title = "Transformation of c-oriented nanowall network to a flat morphology in GaN films on c-plane sapphire",
abstract = "The work significantly optimizes growth parameters for nanostructured and flat GaN film in the 480–830 °C temperature range. The growth of ordered, high quality GaN nanowall hexagonal honeycomb like network on c-plane sapphire under nitrogen rich (N/Ga ratio of 100) conditions at temperatures below 700 °C is demonstrated. The walls are c-oriented wurtzite structures 200 nm wide at base and taper to 10 nm at apex, manifesting electron confinement effects to tune optoelectronic properties. For substrate temperatures above 700 °C the nanowalls thicken to a flat morphology with a dislocation density of 1010/cm2. The role of misfit dislocations in the GaN overlayer evolution is discussed in terms of growth kinetics being influenced by adatom diffusion, interactions and bonding at different temperatures. The GaN films are characterized by reflection high energy electron diffraction (RHEED), field emission scanning electron (FESEM), high resolution X-ray diffraction (HRXRD) and cathodoluminescence (CL).",
author = "Manoj Kesaria and Satish Shetty and P.I. Cohen and Shivaprasad, {S. M.}",
year = "2011",
month = nov,
doi = "10.1016/j.materresbull.2011.07.043",
language = "English",
volume = "46",
pages = "1811--1813",
journal = "Materials Research Bulletin",
publisher = "Elsevier Limited",
number = "11",

}

RIS

TY - JOUR

T1 - Transformation of c-oriented nanowall network to a flat morphology in GaN films on c-plane sapphire

AU - Kesaria, Manoj

AU - Shetty, Satish

AU - Cohen, P.I.

AU - Shivaprasad, S. M.

PY - 2011/11

Y1 - 2011/11

N2 - The work significantly optimizes growth parameters for nanostructured and flat GaN film in the 480–830 °C temperature range. The growth of ordered, high quality GaN nanowall hexagonal honeycomb like network on c-plane sapphire under nitrogen rich (N/Ga ratio of 100) conditions at temperatures below 700 °C is demonstrated. The walls are c-oriented wurtzite structures 200 nm wide at base and taper to 10 nm at apex, manifesting electron confinement effects to tune optoelectronic properties. For substrate temperatures above 700 °C the nanowalls thicken to a flat morphology with a dislocation density of 1010/cm2. The role of misfit dislocations in the GaN overlayer evolution is discussed in terms of growth kinetics being influenced by adatom diffusion, interactions and bonding at different temperatures. The GaN films are characterized by reflection high energy electron diffraction (RHEED), field emission scanning electron (FESEM), high resolution X-ray diffraction (HRXRD) and cathodoluminescence (CL).

AB - The work significantly optimizes growth parameters for nanostructured and flat GaN film in the 480–830 °C temperature range. The growth of ordered, high quality GaN nanowall hexagonal honeycomb like network on c-plane sapphire under nitrogen rich (N/Ga ratio of 100) conditions at temperatures below 700 °C is demonstrated. The walls are c-oriented wurtzite structures 200 nm wide at base and taper to 10 nm at apex, manifesting electron confinement effects to tune optoelectronic properties. For substrate temperatures above 700 °C the nanowalls thicken to a flat morphology with a dislocation density of 1010/cm2. The role of misfit dislocations in the GaN overlayer evolution is discussed in terms of growth kinetics being influenced by adatom diffusion, interactions and bonding at different temperatures. The GaN films are characterized by reflection high energy electron diffraction (RHEED), field emission scanning electron (FESEM), high resolution X-ray diffraction (HRXRD) and cathodoluminescence (CL).

U2 - 10.1016/j.materresbull.2011.07.043

DO - 10.1016/j.materresbull.2011.07.043

M3 - Journal article

VL - 46

SP - 1811

EP - 1813

JO - Materials Research Bulletin

JF - Materials Research Bulletin

IS - 11

ER -