Accepted author manuscript, 751 KB, PDF document
Final published version
Licence: CC BY
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
}
TY - JOUR
T1 - Transport of modulation-doped Al0.2Ga0.8Sb/GaSb heterojunctions
AU - Hanks, Laura
AU - Hayne, Manus
AU - Marshall, Andrew Robert Julian
AU - Ponomarenko, Leonid Alexandrovich
PY - 2018/3/2
Y1 - 2018/3/2
N2 - Mobilities and carrier densities of modulation doped Al0.2Ga0.8Sb/GaSb heterostructures are presented for the first time. The structures studied were grown by molecular beam epitaxy and consisted of a single heterojunction with Te compensation doping to reduce the intrinsic p-type background. Hall measurements were performed from 30–300 K, giving p-type mobilities peaking at 3240 cm2/Vs, a considerable improvement over previous reported bulk mobilities for samples with compensation doping. Growth trials on bulk material have also been carried out to investigate the optimum growth conditions for future structures, with the aim of minimising the occurrence of natural growth defects in GaSb, which act as acceptors. Together these measurements lay the ground work for (magneto)transport studies of two-dimensional charge-carriers in AlxGa1-xSb/GaSb heterostructures, which has not been previously reported.
AB - Mobilities and carrier densities of modulation doped Al0.2Ga0.8Sb/GaSb heterostructures are presented for the first time. The structures studied were grown by molecular beam epitaxy and consisted of a single heterojunction with Te compensation doping to reduce the intrinsic p-type background. Hall measurements were performed from 30–300 K, giving p-type mobilities peaking at 3240 cm2/Vs, a considerable improvement over previous reported bulk mobilities for samples with compensation doping. Growth trials on bulk material have also been carried out to investigate the optimum growth conditions for future structures, with the aim of minimising the occurrence of natural growth defects in GaSb, which act as acceptors. Together these measurements lay the ground work for (magneto)transport studies of two-dimensional charge-carriers in AlxGa1-xSb/GaSb heterostructures, which has not been previously reported.
U2 - 10.1088/1742-6596/964/1/012006
DO - 10.1088/1742-6596/964/1/012006
M3 - Journal article
VL - 964
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
M1 - 012006
ER -