Home > Research > Publications & Outputs > Transport through an impurity tunnel coupled to...

Electronic data

  • 1.4930909

    Rights statement: Copyright (2015) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 107, 103112 and may be found at (http://scitation.aip.org/content/aip/journal/apl/107/10/10.1063/1.4930909)

    Final published version, 2.83 MB, PDF document


Text available via DOI:

View graph of relations

Transport through an impurity tunnel coupled to a Si/SiGe quantum dot

Research output: Contribution to Journal/MagazineJournal articlepeer-review

  • Ryan H. Foote
  • Daniel R. Ward
  • Jonathan Prance
  • John King Gamble
  • Erik Nielsen
  • Brandur Thorgrimsson
  • D. E. Savage
  • Andre Saraiva
  • Mark Friesen
  • S. N. Coppersmith
  • M. A. Eriksson
Article number103112
<mark>Journal publication date</mark>11/09/2015
<mark>Journal</mark>Applied Physics Letters
Issue number10
Publication StatusPublished
Early online date11/09/15
<mark>Original language</mark>English


Achieving controllable coupling of dopants in silicon is crucial for operating donor-based qubit devices, but it is difficult because of the small size of donor-bound electron wavefunctions. Here, we report the characterization of a quantum dot coupled to a localized electronic state and present evidence of controllable coupling between the quantum dot and the localized state. A set of measurements of transport through the device enable the determination that the most likely location of the localized state is consistent with a location in the quantum well near the edge of the quantum dot. Our results are consistent with a gate-voltage controllable tunnel coupling, which is an important building block for hybrid donor and gate-defined quantum dot devices.

Bibliographic note

Author was trying to obtain AAM.