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    Rights statement: Copyright (2015) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 107, 103112 and may be found at (http://scitation.aip.org/content/aip/journal/apl/107/10/10.1063/1.4930909)

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Transport through an impurity tunnel coupled to a Si/SiGe quantum dot

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Transport through an impurity tunnel coupled to a Si/SiGe quantum dot. / Foote, Ryan H.; Ward, Daniel R.; Prance, Jonathan et al.
In: Applied Physics Letters, Vol. 107, No. 10, 103112, 11.09.2015.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Foote, RH, Ward, DR, Prance, J, Gamble, JK, Nielsen, E, Thorgrimsson, B, Savage, DE, Saraiva, A, Friesen, M, Coppersmith, SN & Eriksson, MA 2015, 'Transport through an impurity tunnel coupled to a Si/SiGe quantum dot', Applied Physics Letters, vol. 107, no. 10, 103112. https://doi.org/10.1063/1.4930909

APA

Foote, R. H., Ward, D. R., Prance, J., Gamble, J. K., Nielsen, E., Thorgrimsson, B., Savage, D. E., Saraiva, A., Friesen, M., Coppersmith, S. N., & Eriksson, M. A. (2015). Transport through an impurity tunnel coupled to a Si/SiGe quantum dot. Applied Physics Letters, 107(10), Article 103112. https://doi.org/10.1063/1.4930909

Vancouver

Foote RH, Ward DR, Prance J, Gamble JK, Nielsen E, Thorgrimsson B et al. Transport through an impurity tunnel coupled to a Si/SiGe quantum dot. Applied Physics Letters. 2015 Sept 11;107(10):103112. Epub 2015 Sept 11. doi: 10.1063/1.4930909

Author

Foote, Ryan H. ; Ward, Daniel R. ; Prance, Jonathan et al. / Transport through an impurity tunnel coupled to a Si/SiGe quantum dot. In: Applied Physics Letters. 2015 ; Vol. 107, No. 10.

Bibtex

@article{c74cc9adfb6840e09edcc3f983c9135d,
title = "Transport through an impurity tunnel coupled to a Si/SiGe quantum dot",
abstract = "Achieving controllable coupling of dopants in silicon is crucial for operating donor-based qubit devices, but it is difficult because of the small size of donor-bound electron wavefunctions. Here, we report the characterization of a quantum dot coupled to a localized electronic state and present evidence of controllable coupling between the quantum dot and the localized state. A set of measurements of transport through the device enable the determination that the most likely location of the localized state is consistent with a location in the quantum well near the edge of the quantum dot. Our results are consistent with a gate-voltage controllable tunnel coupling, which is an important building block for hybrid donor and gate-defined quantum dot devices.",
author = "Foote, {Ryan H.} and Ward, {Daniel R.} and Jonathan Prance and Gamble, {John King} and Erik Nielsen and Brandur Thorgrimsson and Savage, {D. E.} and Andre Saraiva and Mark Friesen and Coppersmith, {S. N.} and Eriksson, {M. A.}",
note = "Author was trying to obtain AAM.",
year = "2015",
month = sep,
day = "11",
doi = "10.1063/1.4930909",
language = "English",
volume = "107",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "10",

}

RIS

TY - JOUR

T1 - Transport through an impurity tunnel coupled to a Si/SiGe quantum dot

AU - Foote, Ryan H.

AU - Ward, Daniel R.

AU - Prance, Jonathan

AU - Gamble, John King

AU - Nielsen, Erik

AU - Thorgrimsson, Brandur

AU - Savage, D. E.

AU - Saraiva, Andre

AU - Friesen, Mark

AU - Coppersmith, S. N.

AU - Eriksson, M. A.

N1 - Author was trying to obtain AAM.

PY - 2015/9/11

Y1 - 2015/9/11

N2 - Achieving controllable coupling of dopants in silicon is crucial for operating donor-based qubit devices, but it is difficult because of the small size of donor-bound electron wavefunctions. Here, we report the characterization of a quantum dot coupled to a localized electronic state and present evidence of controllable coupling between the quantum dot and the localized state. A set of measurements of transport through the device enable the determination that the most likely location of the localized state is consistent with a location in the quantum well near the edge of the quantum dot. Our results are consistent with a gate-voltage controllable tunnel coupling, which is an important building block for hybrid donor and gate-defined quantum dot devices.

AB - Achieving controllable coupling of dopants in silicon is crucial for operating donor-based qubit devices, but it is difficult because of the small size of donor-bound electron wavefunctions. Here, we report the characterization of a quantum dot coupled to a localized electronic state and present evidence of controllable coupling between the quantum dot and the localized state. A set of measurements of transport through the device enable the determination that the most likely location of the localized state is consistent with a location in the quantum well near the edge of the quantum dot. Our results are consistent with a gate-voltage controllable tunnel coupling, which is an important building block for hybrid donor and gate-defined quantum dot devices.

U2 - 10.1063/1.4930909

DO - 10.1063/1.4930909

M3 - Journal article

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 10

M1 - 103112

ER -