Research output: Contribution to conference - Without ISBN/ISSN › Conference paper › peer-review
Publication date | 1/12/1994 |
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Number of pages | 1 |
Pages | 155 |
<mark>Original language</mark> | English |
Event | Proceedings of the 5th European Quantum Electronics Conference - Amsterdam, Neth Duration: 28/08/1994 → 2/09/1994 |
Conference | Proceedings of the 5th European Quantum Electronics Conference |
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City | Amsterdam, Neth |
Period | 28/08/94 → 2/09/94 |
The results of the experimental investigation of disorder effects of near-band-gap reflection and photoluminescence (PL) spectra of p-GaInP are reported in this paper. For the first time for this semiconductor, disorder-induced increase of the surface recombination velocity was determined by means of direct PL decay time measurements.