Research output: Contribution to conference - Without ISBN/ISSN › Conference paper › peer-review
| Publication date | 1/12/1994 |
|---|---|
| Number of pages | 1 |
| Pages | 155 |
| <mark>Original language</mark> | English |
| Event | Proceedings of the 5th European Quantum Electronics Conference - Amsterdam, Neth Duration: 28/08/1994 → 2/09/1994 |
| Conference | Proceedings of the 5th European Quantum Electronics Conference |
|---|---|
| City | Amsterdam, Neth |
| Period | 28/08/94 → 2/09/94 |
The results of the experimental investigation of disorder effects of near-band-gap reflection and photoluminescence (PL) spectra of p-GaInP are reported in this paper. For the first time for this semiconductor, disorder-induced increase of the surface recombination velocity was determined by means of direct PL decay time measurements.