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Disorder effects on the optical properties and luminescence decay time of p-In0.5Ga0.5P

Research output: Contribution to conference - Without ISBN/ISSN › Conference paper › peer-review

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Disorder effects on the optical properties and luminescence decay time of p-In0.5Ga0.5P. / Golubev, G. P.; Kaufman, I. Kh; Luchinsky, D. G. et al.
1994. 155 Paper presented at Proceedings of the 5th European Quantum Electronics Conference, Amsterdam, Neth.

Research output: Contribution to conference - Without ISBN/ISSN › Conference paper › peer-review

Harvard

Golubev, GP, Kaufman, IK, Luchinsky, DG & Zhukov, EA 1994, 'Disorder effects on the optical properties and luminescence decay time of p-In0.5Ga0.5P', Paper presented at Proceedings of the 5th European Quantum Electronics Conference, Amsterdam, Neth, 28/08/94 - 2/09/94 pp. 155. https://doi.org/10.1109/EQEC.1994.698299

APA

Golubev, G. P., Kaufman, I. K., Luchinsky, D. G., & Zhukov, E. A. (1994). Disorder effects on the optical properties and luminescence decay time of p-In0.5Ga0.5P. 155. Paper presented at Proceedings of the 5th European Quantum Electronics Conference, Amsterdam, Neth. https://doi.org/10.1109/EQEC.1994.698299

Vancouver

Golubev GP, Kaufman IK, Luchinsky DG, Zhukov EA. Disorder effects on the optical properties and luminescence decay time of p-In0.5Ga0.5P. 1994. Paper presented at Proceedings of the 5th European Quantum Electronics Conference, Amsterdam, Neth. doi: 10.1109/EQEC.1994.698299

Author

Golubev, G. P. ; Kaufman, I. Kh ; Luchinsky, D. G. et al. / Disorder effects on the optical properties and luminescence decay time of p-In0.5Ga0.5P. Paper presented at Proceedings of the 5th European Quantum Electronics Conference, Amsterdam, Neth.1 p.

Bibtex

@conference{bee1e588608f4b49963eff9283028c20,
title = "Disorder effects on the optical properties and luminescence decay time of p-In0.5Ga0.5P",
abstract = "The results of the experimental investigation of disorder effects of near-band-gap reflection and photoluminescence (PL) spectra of p-GaInP are reported in this paper. For the first time for this semiconductor, disorder-induced increase of the surface recombination velocity was determined by means of direct PL decay time measurements.",
author = "Golubev, {G. P.} and Kaufman, {I. Kh} and Luchinsky, {D. G.} and Zhukov, {E. A.}",
year = "1994",
month = dec,
day = "1",
doi = "10.1109/EQEC.1994.698299",
language = "English",
pages = " 155",
note = "Proceedings of the 5th European Quantum Electronics Conference ; Conference date: 28-08-1994 Through 02-09-1994",

}

RIS

TY - CONF

T1 - Disorder effects on the optical properties and luminescence decay time of p-In0.5Ga0.5P

AU - Golubev, G. P.

AU - Kaufman, I. Kh

AU - Luchinsky, D. G.

AU - Zhukov, E. A.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - The results of the experimental investigation of disorder effects of near-band-gap reflection and photoluminescence (PL) spectra of p-GaInP are reported in this paper. For the first time for this semiconductor, disorder-induced increase of the surface recombination velocity was determined by means of direct PL decay time measurements.

AB - The results of the experimental investigation of disorder effects of near-band-gap reflection and photoluminescence (PL) spectra of p-GaInP are reported in this paper. For the first time for this semiconductor, disorder-induced increase of the surface recombination velocity was determined by means of direct PL decay time measurements.

U2 - 10.1109/EQEC.1994.698299

DO - 10.1109/EQEC.1994.698299

M3 - Conference paper

AN - SCOPUS:0028554333

SP - 155

T2 - Proceedings of the 5th European Quantum Electronics Conference

Y2 - 28 August 1994 through 2 September 1994

ER -