Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
}
TY - JOUR
T1 - High-sensitivity photodetectors based on multilayer GaTe flakes
AU - Liu, F.
AU - Shimotani, H.
AU - Shang, H.
AU - Kanagasekaran, T.
AU - Zolyomi, Viktor
AU - Drummond, Neil
AU - Falko, Vladimir
AU - Tanigaki, K.
PY - 2014/1/28
Y1 - 2014/1/28
N2 - Optoelectronic devices based on layered materials such as graphene have resulted in significant interest due to their unique properties and potential technological applications. The electric and optoelectronic properties of nano GaTe flakes as layered materials are described in this article. The transistor fabricated from multilayer GaTe shows a p-type action with a hole mobility of about 0.2 cm^2 V^(-1) s^(-1). The gate transistor exhibits a high photoresponsivity of 104 A/W, which is greatly better than that of graphene, MoS_2, and other layered compounds. Meanwhile, the response speed of 6 ms is also very fast. Both the high photoresponsivity and the fast response time described in the present study strongly suggest that multilayer GaTe is a promising candidate for future optoelectronic and photosensitive device applications.
AB - Optoelectronic devices based on layered materials such as graphene have resulted in significant interest due to their unique properties and potential technological applications. The electric and optoelectronic properties of nano GaTe flakes as layered materials are described in this article. The transistor fabricated from multilayer GaTe shows a p-type action with a hole mobility of about 0.2 cm^2 V^(-1) s^(-1). The gate transistor exhibits a high photoresponsivity of 104 A/W, which is greatly better than that of graphene, MoS_2, and other layered compounds. Meanwhile, the response speed of 6 ms is also very fast. Both the high photoresponsivity and the fast response time described in the present study strongly suggest that multilayer GaTe is a promising candidate for future optoelectronic and photosensitive device applications.
KW - gallium telluride
KW - layered material
KW - transistor
KW - photodetector
KW - responsivity
U2 - 10.1021/nn4054039
DO - 10.1021/nn4054039
M3 - Journal article
VL - 8
SP - 752
EP - 760
JO - ACS Nano
JF - ACS Nano
SN - 1936-0851
IS - 1
ER -