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High-sensitivity photodetectors based on multilayer GaTe flakes

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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High-sensitivity photodetectors based on multilayer GaTe flakes. / Liu, F.; Shimotani, H.; Shang, H. et al.
In: ACS Nano, Vol. 8, No. 1, 28.01.2014, p. 752-760.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Liu, F, Shimotani, H, Shang, H, Kanagasekaran, T, Zolyomi, V, Drummond, N, Falko, V & Tanigaki, K 2014, 'High-sensitivity photodetectors based on multilayer GaTe flakes', ACS Nano, vol. 8, no. 1, pp. 752-760. https://doi.org/10.1021/nn4054039

APA

Liu, F., Shimotani, H., Shang, H., Kanagasekaran, T., Zolyomi, V., Drummond, N., Falko, V., & Tanigaki, K. (2014). High-sensitivity photodetectors based on multilayer GaTe flakes. ACS Nano, 8(1), 752-760. https://doi.org/10.1021/nn4054039

Vancouver

Liu F, Shimotani H, Shang H, Kanagasekaran T, Zolyomi V, Drummond N et al. High-sensitivity photodetectors based on multilayer GaTe flakes. ACS Nano. 2014 Jan 28;8(1):752-760. Epub 2013 Dec 23. doi: 10.1021/nn4054039

Author

Liu, F. ; Shimotani, H. ; Shang, H. et al. / High-sensitivity photodetectors based on multilayer GaTe flakes. In: ACS Nano. 2014 ; Vol. 8, No. 1. pp. 752-760.

Bibtex

@article{3249ffc0efe842589a0f971054ac83a4,
title = "High-sensitivity photodetectors based on multilayer GaTe flakes",
abstract = "Optoelectronic devices based on layered materials such as graphene have resulted in significant interest due to their unique properties and potential technological applications. The electric and optoelectronic properties of nano GaTe flakes as layered materials are described in this article. The transistor fabricated from multilayer GaTe shows a p-type action with a hole mobility of about 0.2 cm^2 V^(-1) s^(-1). The gate transistor exhibits a high photoresponsivity of 104 A/W, which is greatly better than that of graphene, MoS_2, and other layered compounds. Meanwhile, the response speed of 6 ms is also very fast. Both the high photoresponsivity and the fast response time described in the present study strongly suggest that multilayer GaTe is a promising candidate for future optoelectronic and photosensitive device applications.",
keywords = "gallium telluride, layered material , transistor , photodetector , responsivity",
author = "F. Liu and H. Shimotani and H. Shang and T. Kanagasekaran and Viktor Zolyomi and Neil Drummond and Vladimir Falko and K. Tanigaki",
year = "2014",
month = jan,
day = "28",
doi = "10.1021/nn4054039",
language = "English",
volume = "8",
pages = "752--760",
journal = "ACS Nano",
issn = "1936-0851",
publisher = "American Chemical Society",
number = "1",

}

RIS

TY - JOUR

T1 - High-sensitivity photodetectors based on multilayer GaTe flakes

AU - Liu, F.

AU - Shimotani, H.

AU - Shang, H.

AU - Kanagasekaran, T.

AU - Zolyomi, Viktor

AU - Drummond, Neil

AU - Falko, Vladimir

AU - Tanigaki, K.

PY - 2014/1/28

Y1 - 2014/1/28

N2 - Optoelectronic devices based on layered materials such as graphene have resulted in significant interest due to their unique properties and potential technological applications. The electric and optoelectronic properties of nano GaTe flakes as layered materials are described in this article. The transistor fabricated from multilayer GaTe shows a p-type action with a hole mobility of about 0.2 cm^2 V^(-1) s^(-1). The gate transistor exhibits a high photoresponsivity of 104 A/W, which is greatly better than that of graphene, MoS_2, and other layered compounds. Meanwhile, the response speed of 6 ms is also very fast. Both the high photoresponsivity and the fast response time described in the present study strongly suggest that multilayer GaTe is a promising candidate for future optoelectronic and photosensitive device applications.

AB - Optoelectronic devices based on layered materials such as graphene have resulted in significant interest due to their unique properties and potential technological applications. The electric and optoelectronic properties of nano GaTe flakes as layered materials are described in this article. The transistor fabricated from multilayer GaTe shows a p-type action with a hole mobility of about 0.2 cm^2 V^(-1) s^(-1). The gate transistor exhibits a high photoresponsivity of 104 A/W, which is greatly better than that of graphene, MoS_2, and other layered compounds. Meanwhile, the response speed of 6 ms is also very fast. Both the high photoresponsivity and the fast response time described in the present study strongly suggest that multilayer GaTe is a promising candidate for future optoelectronic and photosensitive device applications.

KW - gallium telluride

KW - layered material

KW - transistor

KW - photodetector

KW - responsivity

U2 - 10.1021/nn4054039

DO - 10.1021/nn4054039

M3 - Journal article

VL - 8

SP - 752

EP - 760

JO - ACS Nano

JF - ACS Nano

SN - 1936-0851

IS - 1

ER -