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High-sensitivity photodetectors based on multilayer GaTe flakes

Research output: Contribution to Journal/MagazineJournal articlepeer-review

<mark>Journal publication date</mark>28/01/2014
<mark>Journal</mark>ACS Nano
Issue number1
Number of pages9
Pages (from-to)752-760
Publication StatusPublished
Early online date23/12/13
<mark>Original language</mark>English


Optoelectronic devices based on layered materials such as graphene have resulted in significant interest due to their unique properties and potential technological applications. The electric and optoelectronic properties of nano GaTe flakes as layered materials are described in this article. The transistor fabricated from multilayer GaTe shows a p-type action with a hole mobility of about 0.2 cm^2 V^(-1) s^(-1). The gate transistor exhibits a high photoresponsivity of 104 A/W, which is greatly better than that of graphene, MoS_2, and other layered compounds. Meanwhile, the response speed of 6 ms is also very fast. Both the high photoresponsivity and the fast response time described in the present study strongly suggest that multilayer GaTe is a promising candidate for future optoelectronic and photosensitive device applications.