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  • Low_Bandgap_TPV_Array_based_on_InAs_final_revised_8th_Sept_2015

    Rights statement: This is the author’s version of a work that was accepted for publication in Infrared Physics and Technology. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Infrared Physics and Technology, 73, 2015 DOI: 10.1016/j.infrared.2015.09.011

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Low bandgap mid-infrared thermophotovoltaic arrays based on InAs

Research output: Contribution to journalJournal article

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<mark>Journal publication date</mark>11/2015
<mark>Journal</mark>Infrared Physics and Technology
Volume73
Number of pages4
Pages (from-to)126-129
Publication statusPublished
Early online date24/09/15
Original languageEnglish

Abstract

We demonstrate the first low bandgap thermophotovoltaic (TPV) arrays capable of operating with heat sources at temperatures as low as 345 °C, which is the lowest ever reported. The individual array elements are based on narrow band gap InAs/InAs0.61Sb0.13P0.26 photodiode structures. External power conversion efficiency was measured to be ∼3% from a single element at room temperature, using a black body at 950 °C. Both 25-element and 65-element arrays were fabricated and exhibited a TPV response at different source temperatures in the range 345–950 °C suitable for electricity generation from waste heat and other applications.

Bibliographic note

This is the author’s version of a work that was accepted for publication in Infrared Physics and Technology. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Infrared Physics and Technology, 73, 2015 DOI: 10.1016/j.infrared.2015.09.011