Rights statement: This is the author’s version of a work that was accepted for publication in Infrared Physics and Technology. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Infrared Physics and Technology, 73, 2015 DOI: 10.1016/j.infrared.2015.09.011
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Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Low bandgap mid-infrared thermophotovoltaic arrays based on InAs
AU - Krier, Anthony
AU - Yin, Min
AU - Marshall, Andrew
AU - Kesaria, Manoj
AU - Krier, Susan
AU - McDougall, S.
AU - Meredith, W.
AU - Johnson, A.D.
AU - Inskip, J.
AU - Scholes, A.
N1 - This is the author’s version of a work that was accepted for publication in Infrared Physics and Technology. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Infrared Physics and Technology, 73, 2015 DOI: 10.1016/j.infrared.2015.09.011
PY - 2015/11
Y1 - 2015/11
N2 - We demonstrate the first low bandgap thermophotovoltaic (TPV) arrays capable of operating with heat sources at temperatures as low as 345 °C, which is the lowest ever reported. The individual array elements are based on narrow band gap InAs/InAs0.61Sb0.13P0.26 photodiode structures. External power conversion efficiency was measured to be ∼3% from a single element at room temperature, using a black body at 950 °C. Both 25-element and 65-element arrays were fabricated and exhibited a TPV response at different source temperatures in the range 345–950 °C suitable for electricity generation from waste heat and other applications.
AB - We demonstrate the first low bandgap thermophotovoltaic (TPV) arrays capable of operating with heat sources at temperatures as low as 345 °C, which is the lowest ever reported. The individual array elements are based on narrow band gap InAs/InAs0.61Sb0.13P0.26 photodiode structures. External power conversion efficiency was measured to be ∼3% from a single element at room temperature, using a black body at 950 °C. Both 25-element and 65-element arrays were fabricated and exhibited a TPV response at different source temperatures in the range 345–950 °C suitable for electricity generation from waste heat and other applications.
KW - Thermo-photovoltaic
KW - Mid-infrared
KW - Low bandgap
KW - InAs
KW - Waste heat recovery
U2 - 10.1016/j.infrared.2015.09.011
DO - 10.1016/j.infrared.2015.09.011
M3 - Journal article
VL - 73
SP - 126
EP - 129
JO - Infrared Physics and Technology
JF - Infrared Physics and Technology
SN - 1350-4495
ER -