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  • Low_Bandgap_TPV_Array_based_on_InAs_final_revised_8th_Sept_2015

    Rights statement: This is the author’s version of a work that was accepted for publication in Infrared Physics and Technology. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Infrared Physics and Technology, 73, 2015 DOI: 10.1016/j.infrared.2015.09.011

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Low bandgap mid-infrared thermophotovoltaic arrays based on InAs

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Low bandgap mid-infrared thermophotovoltaic arrays based on InAs. / Krier, Anthony; Yin, Min; Marshall, Andrew; Kesaria, Manoj; Krier, Susan; McDougall, S.; Meredith, W.; Johnson, A.D.; Inskip, J.; Scholes, A.

In: Infrared Physics and Technology, Vol. 73, 11.2015, p. 126-129.

Research output: Contribution to journalJournal article

Harvard

Krier, A, Yin, M, Marshall, A, Kesaria, M, Krier, S, McDougall, S, Meredith, W, Johnson, AD, Inskip, J & Scholes, A 2015, 'Low bandgap mid-infrared thermophotovoltaic arrays based on InAs', Infrared Physics and Technology, vol. 73, pp. 126-129. https://doi.org/10.1016/j.infrared.2015.09.011

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Author

Krier, Anthony ; Yin, Min ; Marshall, Andrew ; Kesaria, Manoj ; Krier, Susan ; McDougall, S. ; Meredith, W. ; Johnson, A.D. ; Inskip, J. ; Scholes, A. / Low bandgap mid-infrared thermophotovoltaic arrays based on InAs. In: Infrared Physics and Technology. 2015 ; Vol. 73. pp. 126-129.

Bibtex

@article{2ae8cba509b54cd59b2f6cf6ebe3ae45,
title = "Low bandgap mid-infrared thermophotovoltaic arrays based on InAs",
abstract = "We demonstrate the first low bandgap thermophotovoltaic (TPV) arrays capable of operating with heat sources at temperatures as low as 345 °C, which is the lowest ever reported. The individual array elements are based on narrow band gap InAs/InAs0.61Sb0.13P0.26 photodiode structures. External power conversion efficiency was measured to be ∼3{\%} from a single element at room temperature, using a black body at 950 °C. Both 25-element and 65-element arrays were fabricated and exhibited a TPV response at different source temperatures in the range 345–950 °C suitable for electricity generation from waste heat and other applications.",
keywords = "Thermo-photovoltaic, Mid-infrared, Low bandgap, InAs, Waste heat recovery",
author = "Anthony Krier and Min Yin and Andrew Marshall and Manoj Kesaria and Susan Krier and S. McDougall and W. Meredith and A.D. Johnson and J. Inskip and A. Scholes",
note = "This is the author’s version of a work that was accepted for publication in Infrared Physics and Technology. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Infrared Physics and Technology, 73, 2015 DOI: 10.1016/j.infrared.2015.09.011",
year = "2015",
month = "11",
doi = "10.1016/j.infrared.2015.09.011",
language = "English",
volume = "73",
pages = "126--129",
journal = "Infrared Physics and Technology",
issn = "1350-4495",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Low bandgap mid-infrared thermophotovoltaic arrays based on InAs

AU - Krier, Anthony

AU - Yin, Min

AU - Marshall, Andrew

AU - Kesaria, Manoj

AU - Krier, Susan

AU - McDougall, S.

AU - Meredith, W.

AU - Johnson, A.D.

AU - Inskip, J.

AU - Scholes, A.

N1 - This is the author’s version of a work that was accepted for publication in Infrared Physics and Technology. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Infrared Physics and Technology, 73, 2015 DOI: 10.1016/j.infrared.2015.09.011

PY - 2015/11

Y1 - 2015/11

N2 - We demonstrate the first low bandgap thermophotovoltaic (TPV) arrays capable of operating with heat sources at temperatures as low as 345 °C, which is the lowest ever reported. The individual array elements are based on narrow band gap InAs/InAs0.61Sb0.13P0.26 photodiode structures. External power conversion efficiency was measured to be ∼3% from a single element at room temperature, using a black body at 950 °C. Both 25-element and 65-element arrays were fabricated and exhibited a TPV response at different source temperatures in the range 345–950 °C suitable for electricity generation from waste heat and other applications.

AB - We demonstrate the first low bandgap thermophotovoltaic (TPV) arrays capable of operating with heat sources at temperatures as low as 345 °C, which is the lowest ever reported. The individual array elements are based on narrow band gap InAs/InAs0.61Sb0.13P0.26 photodiode structures. External power conversion efficiency was measured to be ∼3% from a single element at room temperature, using a black body at 950 °C. Both 25-element and 65-element arrays were fabricated and exhibited a TPV response at different source temperatures in the range 345–950 °C suitable for electricity generation from waste heat and other applications.

KW - Thermo-photovoltaic

KW - Mid-infrared

KW - Low bandgap

KW - InAs

KW - Waste heat recovery

U2 - 10.1016/j.infrared.2015.09.011

DO - 10.1016/j.infrared.2015.09.011

M3 - Journal article

VL - 73

SP - 126

EP - 129

JO - Infrared Physics and Technology

JF - Infrared Physics and Technology

SN - 1350-4495

ER -