Home > Research > Publications & Outputs > Low leakage-current InAsSb nanowire photodetect...

Research

Associated organisational units

Electronic data

  • InAsSbNanowires

    Accepted author manuscript, 3.22 MB, PDF document

    Available under license: CC BY: Creative Commons Attribution 4.0 International License

Links

Text available via DOI:

View graph of relations

Low leakage-current InAsSb nanowire photodetectors on silicon

Research output: Contribution to journal › Journal article

Published
<mark>Journal publication date</mark>13/01/2016
<mark>Journal</mark>Nano Letters
Issue number1
Volume16
Number of pages6
Pages (from-to)182-187
Publication StatusPublished
Early online date16/12/15
<mark>Original language</mark>English

Abstract

Axially doped p–i–n InAs0.93Sb0.07 nanowire arrays have been grown on Si substrates and fabricated into photodetectors for shortwave infrared detection. The devices exhibit a leakage current density around 2 mA/cm2 and a 20% cutoff of 2.3 μm at 300 K. This record low leakage current density for InAsSb based devices demonstrates the suitability of nanowires for the integration of III–V semiconductors with silicon technology.

Related datasets