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Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Low leakage-current InAsSb nanowire photodetectors on silicon
AU - Thompson, Michael Dermot
AU - Alhodaib, Aiyeshah
AU - Craig, Adam P.
AU - Robson, Alexander James
AU - Aziz, Atif
AU - Krier, Anthony
AU - Svensson, Johannes
AU - Wernersson, Lars-erik
AU - Sanchez, Ana M.
AU - Marshall, Andrew R. J.
PY - 2016/1/13
Y1 - 2016/1/13
N2 - Axially doped p–i–n InAs0.93Sb0.07 nanowire arrays have been grown on Si substrates and fabricated into photodetectors for shortwave infrared detection. The devices exhibit a leakage current density around 2 mA/cm2 and a 20% cutoff of 2.3 μm at 300 K. This record low leakage current density for InAsSb based devices demonstrates the suitability of nanowires for the integration of III–V semiconductors with silicon technology.
AB - Axially doped p–i–n InAs0.93Sb0.07 nanowire arrays have been grown on Si substrates and fabricated into photodetectors for shortwave infrared detection. The devices exhibit a leakage current density around 2 mA/cm2 and a 20% cutoff of 2.3 μm at 300 K. This record low leakage current density for InAsSb based devices demonstrates the suitability of nanowires for the integration of III–V semiconductors with silicon technology.
UR - http://dx.doi.org/10.17635/lancaster/researchdata/51
U2 - 10.1021/acs.nanolett.5b03449
DO - 10.1021/acs.nanolett.5b03449
M3 - Journal article
VL - 16
SP - 182
EP - 187
JO - Nano Letters
JF - Nano Letters
SN - 1530-6984
IS - 1
ER -