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  • APL20-AR-06394

    Rights statement: Copyright 2020 American Institute of Physics. The following article appeared in Applied Physics Letters, 117, 13, 2020 and may be found at http://dx.doi.org/10.1063/5.0022235 This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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Mid-infrared Type-II InAs/InAsSb Quantum Wells Integrated on Silicon

Research output: Contribution to journalJournal article

E-pub ahead of print
Article number131103
<mark>Journal publication date</mark>29/09/2020
<mark>Journal</mark>Applied Physics Letters
Issue number13
Volume117
Number of pages6
Publication StatusE-pub ahead of print
Early online date29/09/20
<mark>Original language</mark>English

Abstract

Direct integration of III–V semiconductor light sources on silicon is an essential step toward the development of portable, on-chip infrared sensor systems. Driven by the presence of characteristic molecular fingerprints in the mid-infrared (MIR) spectral region, such systems may have a wide range of applications in infrared imaging, gas sensing, and medical diagnostics. This paper reports on the integration of an InAs virtual substrate and high crystalline quality InAs/InAsSb multi-quantum wells on Si using a three-stage InAs/GaSb/Si buffer layer. It is shown that the InAs/GaSb interface demonstrates a strong dislocation filtering effect. A series of strained AlSb/InAs dislocation filter superlattices was also used, resulting in a low surface dislocation density of approximately 4 × 107 cm−2. The InAs/InAsSb wells exhibited a strong photoluminescence signal at elevated temperatures. Analysis of these results indicates that radiative recombination is the dominant recombination mechanism, making this structure promising for fabricating MIR Si-based sensor systems.

Bibliographic note

Copyright 2020 American Institute of Physics. The following article appeared in Applied Physics Letters, 117, 13, 2020 and may be found at http://dx.doi.org/10.1063/5.0022235 This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.