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    Rights statement: Copyright 2020 American Institute of Physics. The following article appeared in Applied Physics Letters, 117, 13, 2020 and may be found at http://dx.doi.org/10.1063/5.0022235 This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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Mid-infrared Type-II InAs/InAsSb Quantum Wells Integrated on Silicon

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Mid-infrared Type-II InAs/InAsSb Quantum Wells Integrated on Silicon. / Delli, Evangelia; Hodgson, Peter; Bentley, Matthew; Repiso Menendez, Eva; Craig, Adam; Lu, Qi; Beanland, Richard; Marshall, Andrew; Krier, Anthony; Carrington, Peter.

In: Applied Physics Letters, Vol. 117, No. 13, 131103, 29.09.2020.

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@article{32654e4960224809aaeb00db2fedce97,
title = "Mid-infrared Type-II InAs/InAsSb Quantum Wells Integrated on Silicon",
abstract = "Direct integration of III–V semiconductor light sources on silicon is an essential step toward the development of portable, on-chip infrared sensor systems. Driven by the presence of characteristic molecular fingerprints in the mid-infrared (MIR) spectral region, such systems may have a wide range of applications in infrared imaging, gas sensing, and medical diagnostics. This paper reports on the integration of an InAs virtual substrate and high crystalline quality InAs/InAsSb multi-quantum wells on Si using a three-stage InAs/GaSb/Si buffer layer. It is shown that the InAs/GaSb interface demonstrates a strong dislocation filtering effect. A series of strained AlSb/InAs dislocation filter superlattices was also used, resulting in a low surface dislocation density of approximately 4 × 107 cm−2. The InAs/InAsSb wells exhibited a strong photoluminescence signal at elevated temperatures. Analysis of these results indicates that radiative recombination is the dominant recombination mechanism, making this structure promising for fabricating MIR Si-based sensor systems.",
author = "Evangelia Delli and Peter Hodgson and Matthew Bentley and {Repiso Menendez}, Eva and Adam Craig and Qi Lu and Richard Beanland and Andrew Marshall and Anthony Krier and Peter Carrington",
note = "Copyright 2020 American Institute of Physics. The following article appeared in Applied Physics Letters, 117, 13, 2020 and may be found at http://dx.doi.org/10.1063/5.0022235 This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. ",
year = "2020",
month = sep,
day = "29",
doi = "10.1063/5.0022235",
language = "English",
volume = "117",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "13",

}

RIS

TY - JOUR

T1 - Mid-infrared Type-II InAs/InAsSb Quantum Wells Integrated on Silicon

AU - Delli, Evangelia

AU - Hodgson, Peter

AU - Bentley, Matthew

AU - Repiso Menendez, Eva

AU - Craig, Adam

AU - Lu, Qi

AU - Beanland, Richard

AU - Marshall, Andrew

AU - Krier, Anthony

AU - Carrington, Peter

N1 - Copyright 2020 American Institute of Physics. The following article appeared in Applied Physics Letters, 117, 13, 2020 and may be found at http://dx.doi.org/10.1063/5.0022235 This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

PY - 2020/9/29

Y1 - 2020/9/29

N2 - Direct integration of III–V semiconductor light sources on silicon is an essential step toward the development of portable, on-chip infrared sensor systems. Driven by the presence of characteristic molecular fingerprints in the mid-infrared (MIR) spectral region, such systems may have a wide range of applications in infrared imaging, gas sensing, and medical diagnostics. This paper reports on the integration of an InAs virtual substrate and high crystalline quality InAs/InAsSb multi-quantum wells on Si using a three-stage InAs/GaSb/Si buffer layer. It is shown that the InAs/GaSb interface demonstrates a strong dislocation filtering effect. A series of strained AlSb/InAs dislocation filter superlattices was also used, resulting in a low surface dislocation density of approximately 4 × 107 cm−2. The InAs/InAsSb wells exhibited a strong photoluminescence signal at elevated temperatures. Analysis of these results indicates that radiative recombination is the dominant recombination mechanism, making this structure promising for fabricating MIR Si-based sensor systems.

AB - Direct integration of III–V semiconductor light sources on silicon is an essential step toward the development of portable, on-chip infrared sensor systems. Driven by the presence of characteristic molecular fingerprints in the mid-infrared (MIR) spectral region, such systems may have a wide range of applications in infrared imaging, gas sensing, and medical diagnostics. This paper reports on the integration of an InAs virtual substrate and high crystalline quality InAs/InAsSb multi-quantum wells on Si using a three-stage InAs/GaSb/Si buffer layer. It is shown that the InAs/GaSb interface demonstrates a strong dislocation filtering effect. A series of strained AlSb/InAs dislocation filter superlattices was also used, resulting in a low surface dislocation density of approximately 4 × 107 cm−2. The InAs/InAsSb wells exhibited a strong photoluminescence signal at elevated temperatures. Analysis of these results indicates that radiative recombination is the dominant recombination mechanism, making this structure promising for fabricating MIR Si-based sensor systems.

U2 - 10.1063/5.0022235

DO - 10.1063/5.0022235

M3 - Journal article

VL - 117

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13

M1 - 131103

ER -