Rights statement: Copyright 2020 American Institute of Physics. The following article appeared in Applied Physics Letters, 117, 13, 2020 and may be found at http://dx.doi.org/10.1063/5.0022235 This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
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Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
}
TY - JOUR
T1 - Mid-infrared Type-II InAs/InAsSb Quantum Wells Integrated on Silicon
AU - Delli, Evangelia
AU - Hodgson, Peter
AU - Bentley, Matthew
AU - Repiso Menendez, Eva
AU - Craig, Adam
AU - Lu, Qi
AU - Beanland, Richard
AU - Marshall, Andrew
AU - Krier, Anthony
AU - Carrington, Peter
N1 - Copyright 2020 American Institute of Physics. The following article appeared in Applied Physics Letters, 117, 13, 2020 and may be found at http://dx.doi.org/10.1063/5.0022235 This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
PY - 2020/9/29
Y1 - 2020/9/29
N2 - Direct integration of III–V semiconductor light sources on silicon is an essential step toward the development of portable, on-chip infrared sensor systems. Driven by the presence of characteristic molecular fingerprints in the mid-infrared (MIR) spectral region, such systems may have a wide range of applications in infrared imaging, gas sensing, and medical diagnostics. This paper reports on the integration of an InAs virtual substrate and high crystalline quality InAs/InAsSb multi-quantum wells on Si using a three-stage InAs/GaSb/Si buffer layer. It is shown that the InAs/GaSb interface demonstrates a strong dislocation filtering effect. A series of strained AlSb/InAs dislocation filter superlattices was also used, resulting in a low surface dislocation density of approximately 4 × 107 cm−2. The InAs/InAsSb wells exhibited a strong photoluminescence signal at elevated temperatures. Analysis of these results indicates that radiative recombination is the dominant recombination mechanism, making this structure promising for fabricating MIR Si-based sensor systems.
AB - Direct integration of III–V semiconductor light sources on silicon is an essential step toward the development of portable, on-chip infrared sensor systems. Driven by the presence of characteristic molecular fingerprints in the mid-infrared (MIR) spectral region, such systems may have a wide range of applications in infrared imaging, gas sensing, and medical diagnostics. This paper reports on the integration of an InAs virtual substrate and high crystalline quality InAs/InAsSb multi-quantum wells on Si using a three-stage InAs/GaSb/Si buffer layer. It is shown that the InAs/GaSb interface demonstrates a strong dislocation filtering effect. A series of strained AlSb/InAs dislocation filter superlattices was also used, resulting in a low surface dislocation density of approximately 4 × 107 cm−2. The InAs/InAsSb wells exhibited a strong photoluminescence signal at elevated temperatures. Analysis of these results indicates that radiative recombination is the dominant recombination mechanism, making this structure promising for fabricating MIR Si-based sensor systems.
U2 - 10.1063/5.0022235
DO - 10.1063/5.0022235
M3 - Journal article
VL - 117
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 13
M1 - 131103
ER -