Research output: Contribution to journal › Journal article
|<mark>Journal publication date</mark>||15/05/2012|
|<mark>Journal</mark>||Physica B: Condensed Matter|
|Number of pages||4|
|Early online date||28/09/11|
We report on the fabrication of GaAs based p-i-n solar cells containing 5 and 10 layers of type II GaSb quantum rings grown by molecular beam epitaxy. Solar cells containing quantum rings show improved efficiency at longer wavelengths into the near-IR extending up to 1500 nm and show enhanced short-circuit current under 1 sun illumination compared to a GaAs control cell. A reduction in the open-circuit voltage is observed due to the build-up of internal strain. The MBE growth, formation and photoluminescence of single and stacked layers of GaSb/GaAs quantum rings are also presented. (C) 2011 Elsevier B.V. All rights reserved.