Research output: Contribution to Journal/Magazine › Journal article › peer-review
| <mark>Journal publication date</mark> | 15/05/2012 |
|---|---|
| <mark>Journal</mark> | Physica B: Condensed Matter |
| Issue number | 10 |
| Volume | 407 |
| Number of pages | 4 |
| Pages (from-to) | 1493-1496 |
| Publication Status | Published |
| Early online date | 28/09/11 |
| <mark>Original language</mark> | English |
We report on the fabrication of GaAs based p-i-n solar cells containing 5 and 10 layers of type II GaSb quantum rings grown by molecular beam epitaxy. Solar cells containing quantum rings show improved efficiency at longer wavelengths into the near-IR extending up to 1500 nm and show enhanced short-circuit current under 1 sun illumination compared to a GaAs control cell. A reduction in the open-circuit voltage is observed due to the build-up of internal strain. The MBE growth, formation and photoluminescence of single and stacked layers of GaSb/GaAs quantum rings are also presented. (C) 2011 Elsevier B.V. All rights reserved.