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Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells

Research output: Contribution to Journal/MagazineJournal articlepeer-review

<mark>Journal publication date</mark>15/05/2012
<mark>Journal</mark>Physica B: Condensed Matter
Issue number10
Number of pages4
Pages (from-to)1493-1496
Publication StatusPublished
Early online date28/09/11
<mark>Original language</mark>English


We report on the fabrication of GaAs based p-i-n solar cells containing 5 and 10 layers of type II GaSb quantum rings grown by molecular beam epitaxy. Solar cells containing quantum rings show improved efficiency at longer wavelengths into the near-IR extending up to 1500 nm and show enhanced short-circuit current under 1 sun illumination compared to a GaAs control cell. A reduction in the open-circuit voltage is observed due to the build-up of internal strain. The MBE growth, formation and photoluminescence of single and stacked layers of GaSb/GaAs quantum rings are also presented. (C) 2011 Elsevier B.V. All rights reserved.