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Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells. / Carrington, Peter James; Mahajumi, Abu Syed; Wagener, Magnus C. et al.
In: Physica B: Condensed Matter, Vol. 407, No. 10, 15.05.2012, p. 1493-1496.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Carrington, PJ, Mahajumi, AS, Wagener, MC, Botha, JR, Zhuang, Q & Krier, A 2012, 'Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells', Physica B: Condensed Matter, vol. 407, no. 10, pp. 1493-1496. https://doi.org/10.1016/j.physb.2011.09.069

APA

Carrington, P. J., Mahajumi, A. S., Wagener, M. C., Botha, J. R., Zhuang, Q., & Krier, A. (2012). Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells. Physica B: Condensed Matter, 407(10), 1493-1496. https://doi.org/10.1016/j.physb.2011.09.069

Vancouver

Carrington PJ, Mahajumi AS, Wagener MC, Botha JR, Zhuang Q, Krier A. Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells. Physica B: Condensed Matter. 2012 May 15;407(10):1493-1496. Epub 2011 Sept 28. doi: 10.1016/j.physb.2011.09.069

Author

Carrington, Peter James ; Mahajumi, Abu Syed ; Wagener, Magnus C. et al. / Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells. In: Physica B: Condensed Matter. 2012 ; Vol. 407, No. 10. pp. 1493-1496.

Bibtex

@article{586b7d808d8f46dab1ba6027aa20a52d,
title = "Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells",
abstract = "We report on the fabrication of GaAs based p-i-n solar cells containing 5 and 10 layers of type II GaSb quantum rings grown by molecular beam epitaxy. Solar cells containing quantum rings show improved efficiency at longer wavelengths into the near-IR extending up to 1500 nm and show enhanced short-circuit current under 1 sun illumination compared to a GaAs control cell. A reduction in the open-circuit voltage is observed due to the build-up of internal strain. The MBE growth, formation and photoluminescence of single and stacked layers of GaSb/GaAs quantum rings are also presented. (C) 2011 Elsevier B.V. All rights reserved.",
keywords = "Solar cells, Quantum dots , Molecular beam epitaxy , Photoluminescence",
author = "Carrington, {Peter James} and Mahajumi, {Abu Syed} and Wagener, {Magnus C.} and Botha, {Johannes Reinhardt} and Qiandong Zhuang and Anthony Krier",
year = "2012",
month = may,
day = "15",
doi = "10.1016/j.physb.2011.09.069",
language = "English",
volume = "407",
pages = "1493--1496",
journal = "Physica B: Condensed Matter",
issn = "0921-4526",
publisher = "ELSEVIER SCIENCE BV",
number = "10",

}

RIS

TY - JOUR

T1 - Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells

AU - Carrington, Peter James

AU - Mahajumi, Abu Syed

AU - Wagener, Magnus C.

AU - Botha, Johannes Reinhardt

AU - Zhuang, Qiandong

AU - Krier, Anthony

PY - 2012/5/15

Y1 - 2012/5/15

N2 - We report on the fabrication of GaAs based p-i-n solar cells containing 5 and 10 layers of type II GaSb quantum rings grown by molecular beam epitaxy. Solar cells containing quantum rings show improved efficiency at longer wavelengths into the near-IR extending up to 1500 nm and show enhanced short-circuit current under 1 sun illumination compared to a GaAs control cell. A reduction in the open-circuit voltage is observed due to the build-up of internal strain. The MBE growth, formation and photoluminescence of single and stacked layers of GaSb/GaAs quantum rings are also presented. (C) 2011 Elsevier B.V. All rights reserved.

AB - We report on the fabrication of GaAs based p-i-n solar cells containing 5 and 10 layers of type II GaSb quantum rings grown by molecular beam epitaxy. Solar cells containing quantum rings show improved efficiency at longer wavelengths into the near-IR extending up to 1500 nm and show enhanced short-circuit current under 1 sun illumination compared to a GaAs control cell. A reduction in the open-circuit voltage is observed due to the build-up of internal strain. The MBE growth, formation and photoluminescence of single and stacked layers of GaSb/GaAs quantum rings are also presented. (C) 2011 Elsevier B.V. All rights reserved.

KW - Solar cells

KW - Quantum dots

KW - Molecular beam epitaxy

KW - Photoluminescence

UR - http://www.scopus.com/inward/record.url?scp=84859158266&partnerID=8YFLogxK

U2 - 10.1016/j.physb.2011.09.069

DO - 10.1016/j.physb.2011.09.069

M3 - Journal article

AN - SCOPUS:84859158266

VL - 407

SP - 1493

EP - 1496

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

IS - 10

ER -