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Dr Andrew Marshall

Senior Lecturer

  1. Published

    Antimony based mid-infrared semiconductor materials and devices monolithically grown on silicon substrates

    Carrington, P. J., Delli, E., Hodgson, P. D., Repiso, E., Craig, A., Marshall, A. & Krier, A., 20/11/2017, 30th Annual Conference of the IEEE Photonics Society, IPC 2017. Institute of Electrical and Electronics Engineers Inc., p. 307-308 2 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paperpeer-review

  2. Published

    Heteroepitaxial integration of InAs/InAsSb type-II superlattice barrier photodetectors onto silicon

    Carrington, P., Delli, E., Letka, V., Bentley, M., Hodgson, P., Repiso Menendez, E., Hayton, J., Craig, A., Lu, Q., Beanland, R., Krier, A. & Marshall, A., 24/08/2020, Proceedings Volume 11503, Infrared Sensors, Devices, and Applications X. SPIE--The International Society for Optical Engineering, Vol. 11503.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paperpeer-review

  3. Published

    Impact ionisation in Al0.9Ga0.1As0.08Sb0.92 for Sb-based avalanche photodiodes

    Collins, X., Craig, A. P., Roblin, T. & Marshall, A. R. J., 01/2018, In: Applied Physics Letters. 112, 2, 4 p., 021103.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  4. Published

    Mid-infrared InAs0.79Sb0.21-based nBn photodetectors with Al0.9Ga0.2As0.1Sb0.9 barrier layers, and comparisons with InAs0.87Sb0.13 p-i-n diodes, both grown on GaAs using interfacial misfit arrays

    Craig, A., Marshall, A., Tian, Z-B., Krishna, S. & Krier, A., 16/12/2013, In: Applied Physics Letters. 103, 4 p., 253502.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  5. Published

    Excess noise in GaAs and AlGaAs avalanche photodiodes with GaSb absorption regions—composite structures grown using interfacial misfit arrays

    Craig, A., Reyner, C. J., Marshall, A. & Huffaker, D. L., 28/05/2014, In: Applied Physics Letters. 104, 4 p., 213502.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  6. Published

    Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb

    Craig, A., Jain, M., Wicks, G., Golding, T., Hossain, K., McEwan, K., Howle, C., Percy, B. & Marshall, A., 20/05/2015, In: Applied Physics Letters. 106, 20, 5 p., 201103.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  7. Published

    Mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers – Grown on GaAs, using an interfacial misfit array, and on native GaSb

    Craig, A., Marshall, A., Tian, Z-B. & Krishna, S., 11/2014, In: Infrared Physics and Technology. 67, p. 210-213 4 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  8. Published

    InAsSb-based nBn photodetectors: lattice mismatched growth on GaAs and low-frequency noise performance

    Craig, A., Thompson, M., Tian, Z-B., Krishna, S., Krier, A. & Marshall, A., 24/08/2015, In: Semiconductor Science and Technology. 30, 10, 7 p., 105011.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  9. Published

    Characterization of 6.1 Å III-V materials grown on GaAs and Si: a comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy

    Craig, A., Carrington, P. J., Liu, H. & Marshall, A. R. J., 1/02/2016, In: Journal of Crystal Growth. 435, p. 56-61 6 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  10. Published

    Reprint of "mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers - Grown on GaAs, using an interfacial misfit array, and on native GaSb"

    Craig, A., Marshall, A. R. J., Tian, Z-B. & Krishna, S., 05/2015, In: Infrared Physics and Technology. 70, p. 107-110 4 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

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