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Accepted author manuscript, 469 KB, PDF document
Available under license: CC BY-NC: Creative Commons Attribution-NonCommercial 4.0 International License
Final published version
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Publication date | 20/11/2017 |
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Host publication | 30th Annual Conference of the IEEE Photonics Society, IPC 2017 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 307-308 |
Number of pages | 2 |
ISBN (electronic) | 9781509065783 |
<mark>Original language</mark> | English |
Event | 30th Annual Conference of the IEEE Photonics Society, IPC 2017 - Lake Buena Vista, United States Duration: 1/10/2017 → 5/10/2017 |
Conference | 30th Annual Conference of the IEEE Photonics Society, IPC 2017 |
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Country/Territory | United States |
City | Lake Buena Vista |
Period | 1/10/17 → 5/10/17 |
Conference | 30th Annual Conference of the IEEE Photonics Society, IPC 2017 |
---|---|
Country/Territory | United States |
City | Lake Buena Vista |
Period | 1/10/17 → 5/10/17 |
III-V semiconductor heterostructures grown on GaSb and InAs substrates are widely used to produce high performance optoelectronic devices operating in the technologically important mid-infrared spectral range. However, these substrates are expensive, only available in small sizes and have low thermal conductivity. Integration of III-Vs onto silicon substrates offers the opportunity to overcome these shortcomings and opens the possibility of new applications in lab-on-chip MIR photonic integrated circuits. However, the unusual III-V/Si interface and large lattice mismatch presents challenges to epitaxial growth. Here, we report on novel techniques employed to grow high quality Sb-based optoelectronic devices on silicon using molecular beam epitaxy.