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Professor Anthony Krier

Emeritus Professor

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  1. Published

    Temperature dependence of mid-infrared electroluminescence in type II InAsSb/InAs multi-quantum well light-emitting diodes.

    Carrington, P. J., Zhuang, Q., Yin, M. & Krier, A., 07/2009, In: Semiconductor Science and Technology. 24, 7, p. 075001

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  2. Published

    The development of room temperature LEDs and lasers for the mid-infrared spectral range.

    Krier, A., Yin, M., Smirnov, V., Batty, P. J., Carrington, P., Solovev, V. & Sherstnev, V., 01/2008, In: physica status solidi (a). 205, 1, p. 129-143 15 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  3. Published

    The effect of current crowding on the electroluminescence of InAs mid-infrared light emitting diodes. .

    Monakhov, A., Krier, A. & Sherstnev, V. V., 03/2004, In: Semiconductor Science and Technology. 19, 3, p. 480-484 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  4. Published

    The effect of pressure on the radiative efficiency of InAs based light emitting diodes. .

    Choulis, S. A., Andreev, A., Merrick, M., Jin, S., Clarke, D. G., Murdin, B. N., Adams, A. R., Krier, A. & Sherstnev, V. V., 1/02/2003, In: physica status solidi (b). 235, 2, p. 312-316 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  5. Published

    The influence of melt purification and structure defects on mid-infrared light emitting diodes. .

    Krier, A. & Sherstnev, V. V., 7/07/2003, In: Journal of Physics D: Applied Physics. 36, 13, p. 1484-1488 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  6. Published

    The influence of nitrogen and antimony on the optical quality of InNAs(Sb) alloys

    Latkowska, M., Baranowski, M., Linhart, W. M., Janiaka, F., Misiewicz, J., Segercrantz, N., Tuomisto, F., Zhuang, Q., Krier, A. & Kudrawiec, R., 11/02/2016, In: Journal of Physics D: Applied Physics. 49, 11, 7 p., 115105.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  7. Published

    The structural evolution of InN nanorods to microstructures on Si (111) by molecular beam epitaxy

    Anyebe, E., Zhuang, Q., Kesaria, M. & Krier, A., 08/2014, In: Semiconductor Science and Technology. 29, 8, 7 p., 085010.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  8. Published

    Tuning characteristics of InAsSb continuous-wave lasers. .

    Sherstnev, V., Krier, A., Popov, A. & Werle, P., 20/05/2002, In: Applied Physics Letters. 80, 20, p. 3676-3678 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  9. Published

    Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells

    Carrington, P. J., Mahajumi, A. S., Wagener, M. C., Botha, J. R., Zhuang, Q. & Krier, A., 15/05/2012, In: Physica B: Condensed Matter. 407, 10, p. 1493-1496 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  10. Published

    Type II GaSb/GaAs quantum rings with extended photoresponse for efficient solar cells

    Carrington, P. J., Montesdeoca Cardenes, D., Fujita, H., James Asirvatham, J. S., Wagener, M., Botha, J. R., Marshall, A. R. J. & Krier, A., 23/09/2016, In: Proceedings of SPIE. 9937, 7 p., 993708.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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