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Professor Anthony Krier

Emeritus Professor

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  1. Published

    Structural modifications of InAs based materials for mid-infrared optoelectronic devices

    Nohavica, D. & Krier, A., 2004, ASDAM 2004: The Fifth International Conference on Advanced Semiconductor Devices and Microsystems. Osvald, J. & Hascik, S. (eds.). New York: IEEE, p. 203-206 4 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  2. Published

    Structural Quality of GaSb/GaAs Quantum Dots for Solar Cells Analyzed by Electron Microscopy Techniques

    Fernández-Delgado, N., Herrera, M., Baladés, N., James, J. S., Krier, A., Fujita, H. & Molina, S. I., 03/2016, In: Microscopy and Microanalysis. p. 38-39 2 p.

    Research output: Contribution to Journal/Magazine › Meeting abstract

  3. Published

    Superluminescence in InAsSb circular-ring-mode light-emitting diodes for CO gas detection. .

    Sherstnev, V. V., Monahov, A. M., Krier, A. & Hill, G., 11/12/2000, In: Applied Physics Letters. 77, 24, p. 3908-3910 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  4. Published

    Suppression of the surface “dead region” for fabrication of GaInAsSb thermophotovoltaic cells

    Tang, L., Xu, C., Liu, Z., Lu, Q., Marshall, A. & Krier, A., 04/2017, In: Solar Energy Materials and Solar Cells. 163, p. 263-269 7 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  5. Published

    Synthesis, characterisation and study of photoluminescent properties of head to tail poly(3-pentoxythiophene), poly(3-cyclohexylthiophene) and mixed alkoxy cyclohexyl 3-substituted polythiophenes

    Iraqi, A., Clark, D., Jones, R. & Krier, A., 06/1999, In: Synthetic Metals. 102, 1-3, p. 1220-1221 2 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  6. Published

    Temperature dependence of mid-infrared electroluminescence in type II InAsSb/InAs multi-quantum well light-emitting diodes.

    Carrington, P. J., Zhuang, Q., Yin, M. & Krier, A., 07/2009, In: Semiconductor Science and Technology. 24, 7, p. 075001

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  7. Published

    The development of room temperature LEDs and lasers for the mid-infrared spectral range.

    Krier, A., Yin, M., Smirnov, V., Batty, P. J., Carrington, P., Solovev, V. & Sherstnev, V., 01/2008, In: physica status solidi (a). 205, 1, p. 129-143 15 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  8. Published

    The effect of current crowding on the electroluminescence of InAs mid-infrared light emitting diodes. .

    Monakhov, A., Krier, A. & Sherstnev, V. V., 03/2004, In: Semiconductor Science and Technology. 19, 3, p. 480-484 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  9. Published

    The effect of pressure on the radiative efficiency of InAs based light emitting diodes. .

    Choulis, S. A., Andreev, A., Merrick, M., Jin, S., Clarke, D. G., Murdin, B. N., Adams, A. R., Krier, A. & Sherstnev, V. V., 1/02/2003, In: physica status solidi (b). 235, 2, p. 312-316 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  10. Published

    The influence of melt purification and structure defects on mid-infrared light emitting diodes. .

    Krier, A. & Sherstnev, V. V., 7/07/2003, In: Journal of Physics D: Applied Physics. 36, 13, p. 1484-1488 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  11. Published

    The influence of nitrogen and antimony on the optical quality of InNAs(Sb) alloys

    Latkowska, M., Baranowski, M., Linhart, W. M., Janiaka, F., Misiewicz, J., Segercrantz, N., Tuomisto, F., Zhuang, Q., Krier, A. & Kudrawiec, R., 11/02/2016, In: Journal of Physics D: Applied Physics. 49, 11, 7 p., 115105.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  12. Published

    The structural evolution of InN nanorods to microstructures on Si (111) by molecular beam epitaxy

    Anyebe, E., Zhuang, Q., Kesaria, M. & Krier, A., 08/2014, In: Semiconductor Science and Technology. 29, 8, 7 p., 085010.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  13. Published

    Tuning characteristics of InAsSb continuous-wave lasers. .

    Sherstnev, V., Krier, A., Popov, A. & Werle, P., 20/05/2002, In: Applied Physics Letters. 80, 20, p. 3676-3678 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  14. Published

    Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells

    Carrington, P. J., Mahajumi, A. S., Wagener, M. C., Botha, J. R., Zhuang, Q. & Krier, A., 15/05/2012, In: Physica B: Condensed Matter. 407, 10, p. 1493-1496 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  15. Published

    Type II GaSb/GaAs quantum rings with extended photoresponse for efficient solar cells

    Carrington, P. J., Montesdeoca Cardenes, D., Fujita, H., James Asirvatham, J. S., Wagener, M., Botha, J. R., Marshall, A. R. J. & Krier, A., 23/09/2016, In: Proceedings of SPIE. 9937, 7 p., 993708.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  16. Published

    Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb-2 and As-2 fluxes

    Carrington, P., Solov'ev, V. A., Zhuang, Q., Ivanov, S. V. & Krier, A., 1/02/2008, In: Proceedings of SPIE. 6900, 69000I.

    Research output: Contribution to Journal/Magazine › Journal article

  17. Published

    Uncooled photodetectors for the 3-5 mu m spectral range based on III-V heterojunctions. .

    Krier, A. & Suleiman, W., 21/08/2006, In: Applied Physics Letters. 89, 8, p. 083512

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  18. Published

    ZnO-based thin film transistors employing aluminum titanate gate dielectrics deposited by spray pyrolysis at ambient air

    Afouxenidis, D., Mazzocco, R., Vourlias, G., Livesley, P., Krier, A., Milne, W. I., Kolosov, O. & Adamopoulos, G., 8/04/2015, In: ACS Applied Materials and Interfaces. 7, 13, p. 7334-7341 8 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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